2302P

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2302P（文件编号：S&CIC1975） N-Channel Trench Power MOSFET Description General Description Product Summary ● Trench Power LV MOSFET technology ● High Power and current handing capability ● VDS 20V ● ID 3.2A ● RDS(ON)( at VGS=4.5V) ＜52mohm ● RDS(ON)( at VGS=2.5V) ＜68 mohm Applications ● PWM application ● Load switch Package SOT-23 Schematic Diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±12 V Drain Current TA=25℃ @ Steady State TA=70℃ @ Steady State ID 3.2 2.3 A Pulsed Drain Current A IDM 12 A Total Power Dissipation @ TA=25℃ PD 0.84 W RθJA 167 Thermal Resistance Junction-to-Ambient @ Steady State B TJ ,TSTG Junction and Storage Temperature Range www.superchip.cn 第1页共5页 -55～+150 ℃/ W ℃ Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2302P（文件编号：S&CIC1975） N-Channel Trench Power MOSFET Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min VGS= 0V, ID=250μA 20 Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±12V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=250μA 0.65 1.0 V VGS= 4.5V, ID=2.5A 39 52 RDS(ON) VGS= 2.5V, ID=2.0A 46 68 mΩ VSD IS=2.5A,VGS=0V 1.2 V 3.2 A Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Continuous Current Body-Diode 0.45 IS Dynamic Parameters Input Capacitance Ciss 182 Output Capacitance Coss Reverse Transfer Capacitance Crss 29 Total Gate Charge Qg 3.5 Gate Source Charge Qgs Gate Drain Charge Qgd Turn-on Delay Time tD(on) 7.4 Turn-on Rise Time tr 56 VDS=10V,VGS=0V,f=1MHZ 22 pF Switching Parameters Turn-off Delay Time Turn-off Fall Time A. B. VGS=4.5V,VDS=10V,ID=2.5 A VGS=4.5V,VDD=10V, tD(off) RL=1.5Ω, RGEN=3Ω tf 0.84 nC 0.75 17 ns 55 Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.superchip.cn 第2页共5页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2302P（文件编号：S&CIC1975） N-Channel Trench Power MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.superchip.cn 第3页共5页 Figure6. Drain-Source on Resistance Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2302P（文件编号：S&CIC1975） N-Channel Trench Power MOSFET Figure7. Safe Operation Area www.superchip.cn Figure8. Switching wave 第4页共5页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2302P（文件编号：S&CIC1975） N-Channel Trench Power MOSFET Package Information.  SOT23-3(小) 符号 毫米 英寸 最小 最大 最小 最大 A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP. 1.800 L 0.037 TYP. 2.000 0.071 0.550 REF. 0.079 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° www.superchip.cn 第5页共5页 Version 1.0