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BPW34F

BPW34F

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    PHOTO-DIODE-2P_4.4X3.85MM_TM

  • 描述:

    Photodiode 950nm 20ns 120° 2-DIP (0.213", 5.40mm)

  • 数据手册
  • 价格&库存
BPW34F 数据手册
2016-04-06 Silicon PIN Photodiode with Daylight Blocking Filter Version 1.5 BPW 34 F Features: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density Applications IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment • • Photointerrupters Ordering Information Type: Photocurrent Ordering Code IP [µA] λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V BPW 34 F 2016-04-06 50 (≥ 40) Q62702P0929 1 Version 1.5 BPW 34 F Maximum Ratings (TA = 25 °C) Parameter Symbol Values Unit Operating and storage temperature range Top; Tstg -40 ... 100 °C Reverse voltage VR 16 V Reverse voltage (t < 2 min) VR 32 V Total Power dissipation Ptot 150 mW ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) VESD 2000 V Characteristics (TA = 25 °C) Parameter Symbol Values Unit Photocurrent (typ (min)) IP Wavelength of max. sensitivity (typ) λS max Spectral range of sensitivity (typ) λ10% Radiant sensitive area (typ) A Dimensions of radiant sensitive area (typ) LxW Half angle (typ) ϕ Dark current (VR = 10 V) (typ (max)) IR Spectral sensitivity of the chip (λ = 950 nm) (typ) Sλ typ 0.7 A/W Quantum yield of the chip (λ = 950 nm) (typ) η 0.91 Electro ns /Photon Open-circuit voltage (Ee = 0.5 mW/cm2, λ = 950 nm) (typ (min)) VO 330 (≥ 275) mV Short-circuit current (Ee = 0.5 mW/cm2, λ = 950 nm) (typ) ISC 25 µA Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) (typ) tr, tf 0.02 µs Forward voltage (IF = 100 mA, E = 0) (typ) VF 1.3 V Capacitance (VR = 0 V, f = 1 MHz, E = 0) (typ) C0 72 pF Temperature coefficient of VO (typ) TCV 2016-04-06 2 50 (≥ 40) µA 950 nm (typ) 780 ... 1100 nm 7.02 mm2 2.65 x 2.65 mm x mm ± 60 2 (≤ 30) -2.6 ° nA mV / K Version 1.5 BPW 34 F Parameter Symbol Values Unit Temperature coefficient of ISC (λ = 950 nm) (typ) TCI 0.18 %/K Noise equivalent power (VR = 10 V, λ = 950 nm) (typ) NEP 0.036 pW / Hz½ Detection limit (VR = 10 V, λ = 950 nm) (typ) D* 7.3e12 cm x Hz½ / W Relative Spectral Sensitivity 1) page 7 Srel = f(λ) Photocurrent / Open-Circuit Voltage 1) page 7 IP (VR = 5 V) / VO = f(Ee) OHF00368 100 S rel % ΙP OHF01097 10 3 µA 10 4 mV VO 80 10 2 10 3 VO 60 10 1 10 2 ΙP 40 10 0 10 1 20 0 700 2016-04-06 800 900 1000 nm λ 10 -1 0 10 1200 10 1 10 2 µW/cm 10 0 2 Ee 3 10 4 Version 1.5 BPW 34 F Dark Current 1) page 7 IR = f(VR), E = 0 Power Consumption Ptot = f(TA) OHF00394 160 mW Ptot 140 OHF00080 4000 ΙR 120 pA 3000 100 80 2000 60 40 1000 20 0 0 20 40 60 0 80 ˚C 100 TA Capacitance 1) page 7 C = f(VR), f = 1 MHz, E = 0 0 5 10 15 V VR 20 Dark Current 1) page 7 IR = f(TA), VR = 10 V, E = 0 OHF05717 104 OHF00081 100 nA C pF IR 103 80 70 102 60 50 101 40 30 100 20 10 0 -2 10 10 -1 10 0 10 1 10-1 V 10 2 VR 2016-04-06 0 20 40 60 80 ˚C 100 TA 4 Version 1.5 BPW 34 F Directional Characteristics 1) page 7 Srel = f(ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 Package Outline Dimensions in mm. Package DIL, Epoxy 2016-04-06 5 20 40 60 80 100 120 Version 1.5 BPW 34 F Approximate Weight: 78 mg TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 2016-04-06 6 Version 1.5 BPW 34 F Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 2016-04-06 7 Version 1.5 BPW 34 F Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. 2016-04-06 8
BPW34F 价格&库存

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