VTB1113BH

VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC R SH CJ CHARACTERISTIC Typ. 3.0 6.0 Max. Min. Typ. 3.0 6.0 UNITS Max. H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .02 Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. D* Min. VTB1113BH Short Circuit Current λrange NEP VTB1112BH TEST CONDITIONS .08 µA .02 .08 100 330 720 20 330 40 2 ±15 -14 (Typ.) nm 40 V ±15 Degrees x 10-14 5.3 x 10 1.1 Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) Phone: 877-734-6786 Fax: 450-424-3413 nm 580 Noise Equivalent Power Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 pA 720 580 2 %/°C (Typ.) W ⁄ Hz cm Hz ⁄ W www.excelitas.com