VTB1113H

VTB Process Photodiodes VTB1112H, 1113H PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 13-14) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current VTB1112H TEST CONDITIONS H = 100 fc, 2850 K Min. Typ. 30 60 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V VTB1113H Max. Min. Typ. 30 60 .23 UNITS Max. µA .12 .23 490 %/°C mV -2.0 mV/°C 100 20 pA Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 .31 .31 nF SR Sensitivity 365 nm .19 .19 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP Noise Equivalent Power D* 320 2 320 40 2 nm nm 40 V ±15 Degrees 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.) 12 (Typ.) 2.1 x 10 13 (Typ.) W ⁄ Hz cm Hz ⁄ W 4.2 x 10 Phone: 877-734-6786 Fax: 450-424-3413 26 1100 920 ±15 Specific Detectivity Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 1100 920 www.excelitas.com