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SFH314

SFH314

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    DIP

  • 描述:

    PHOTOTRANSISTORNPN850NMCLEAR

  • 数据手册
  • 价格&库存
SFH314 数据手册
2016-01-04 Silicon NPN Phototransistor Version 1.3 SFH 314 Features: • Spectral range of sensitivity: (typ) 460 ... 1080 nm • Package: 5mm Radial (T 1 ¾), Epoxy • Special: High linearity Applications • Computer-controlled flashes • Photointerrupters • Industrial electronics • For control and drive circuits Ordering Information Type: Photocurrent Ordering Code IPCE [µA] λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V SFH 314 ≥ 630 Q62702P1668 SFH 314-2/3 1000 ... 3200 Q62702P3600 Note: Only one bin within one packing unit (variation less than 2:1) 2016-01-04 1 Version 1.3 SFH 314 Maximum Ratings (TA = 25 °C) Parameter Symbol Values Unit Operating and storage temperature range Top; Tstg -40 ... 100 °C Collector-emitter voltage VCE 70 V Collector current IC 50 mA Collector surge current (τ < 10 µs) ICS 100 mA Emitter-collector voltage VEC 7 Total Power dissipation Ptot 200 mW Thermal resistance RthJA 375 K/W ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) VESD 2000 V V Characteristics (TA = 25 °C) Parameter Symbol Values Unit 850 nm Wavelength of max. sensitivity (typ) λS max Spectral range of sensitivity (typ) λ10% Radiant sensitive area (typ) A 0.55 Dimensions of chip area (typ) LxW (typ) 1 x 1 mm x mm Half angle (typ) ϕ ± 40 Capacitance (VCE = 5 V, f = 1 MHz, E = 0) (typ) CCE Dark current (VCE = 10 V, E = 0) (typ (max)) ICE0 Rise and fall time (IC = 1 mA, VCC = 5 V, RL = 1 kΩ) (typ) 2016-01-04 2 tr, tf (typ) 460 ... 1080 nm mm2 ° 10 pF 3 (≤ 200) nA 11 µs Version 1.3 SFH 314 Grouping (TA = 25 °C, λ = 950 nm) Group Min Photocurrent Max Photocurrent Typ Photocurrent Rise and fall time Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, VCE = 5 V EV = 1000 lx, Std. Light A, VCE = 5 V IC = 1 mA, VCC = 5 V, RL = 1 kΩ IPCE, min [µA] IPCE, max [µA] IPCE [µA] tr, tf [µs] -1 630 1250 3400 8 -2 1000 2000 5400 10 -3 1600 3200 8600 12 -4 2500 13500 14 Group Collector-emitter saturation voltage IC = IPCEmin x 0.3, Ee = 0.5 mW/cm2 VCEsat [mV] -1 150 -2 150 -3 150 -4 150 Note.: IPCEmin is the min. photocurrent of the specified group. 2016-01-04 3 Version 1.3 SFH 314 Relative Spectral Sensitivity 1) page 9 Srel = f(λ) Photocurrent 1) page 9 IPCE = f(Ee), VCE = 5 V OHF02339 10 1 mA OHF02332 100 Ι PCE S rel % 80 10 0 70 60 10 -1 50 40 30 10 -2 20 10 0 10 -3 -3 10 400 500 600 700 800 900 nm 1100 λ Photocurrent 1) page 9 IPCE = f(VCE), Ee = Parameter Ι PCE 1 mW/cm 2 Ee 10 0 Photocurrent 1) page 9 IPCE / IPCE(25°C) = f(TA), VCE = 5 V OHF02338 10 1 mA 10 -2 Ι PCE mW cm 2 OHF01524 1.6 Ι PCE 25 0.5 1.4 mW cm 2 0.25 1.2 mW cm 2 1.0 10 0 0.8 mW 0.1 cm 2 0.6 0.4 0.2 10 -1 2016-01-04 0 10 20 30 40 50 0 -25 V 70 VCE 4 0 25 50 75 C 100 TA Version 1.3 SFH 314 Dark Current 1) page 9 ICEO = f(VCE), E = 0 Dark Current 1) page 9 ICEO = f(TA), E = 0 OHF02341 10 2 nA OHF02342 10 3 nA Ι CEO Ι CEO 10 1 10 2 10 0 10 1 10 -1 10 0 10 -2 10 -1 0 0 10 20 30 40 50 V 70 V CE Collector-Emitter Capacitance 1) page 9 CCE = f(VCE), f = 1 MHz, E = 0 C CE 40 60 80 ˚C 100 TA Power Consumption Ptot = f(TA) OHF02344 20 pF 20 Ptot OHF02340 250 mW 200 15 150 10 100 5 50 0 -2 10 10 -1 10 0 10 1 0 V 10 2 VCE 2016-01-04 5 0 20 40 60 80 ˚C 100 TA Version 1.3 SFH 314 Directional Characteristics 1) page 9 Srel = f(ϕ) 40 30 20 10 ϕ 0 OHF02329 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 Package Outline 6.1 (0.240) 5.7 (0.224) 5.5 (0.217) 1.8 (0.071) 4.0 (0.157) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) 3.4 (0.134) Cathode (Diode) Collector (Transistor) 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) Chip position GEXY6630 Dimensions in mm (inch). Package 5mm Radial (T 1 ¾), Epoxy 2016-01-04 ø4.8 (0.189) 2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 6.9 (0.272) ø5.1 (0.201) Area not flat 6 100 120 Version 1.3 SFH 314 Approximate Weight: 0.3 g Note Packing information is available on the internet (online product catalog). Recommended Solder Pad Dimensions in mm. Note: pad 1: emitter 2016-01-04 7 Version 1.3 SFH 314 TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 2016-01-04 8 Version 1.3 SFH 314 Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 2016-01-04 9 Version 1.3 SFH 314 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. 2016-01-04 10
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