TPGAD1S09H

Datasheet Photon Detection Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Excelitas’ pulsed laser diodes produce very high peak optical pulses centered at a wavelength of 905 nm. The package can emit light parallel or perpendicular to the mounting plane. Key Features • High Volume Reflow SMD package • Multi-epi quantum well structure • Excellent power stability with temperature • Horizontal and vertical emission possibility • 75 µm and 225 µm active laser length • RoHS compliant Applications • LiDAR / ToF measurements • Laser Range Finding • Laser Scanning / UGV • Infrared Night Illumination • Laser Therapy • Material excitation in medical and other analytical applications All specifications are valid for TA = 23 °C, tp = 100 ns and fp = 1 kHz, unless otherwise specified. Table 1: Key parameters Parameter Peak Optical Power Wavelength Operating Temperature1 75 µm, 10 A 225 µm, 30 A Symbol P75 P225 C Top Minimum 18 65 895 -40 Typical 20 70 905 Maximum Unit W 925 85 nm °C Note 1: Extended temperature range specification available. Please contact Excelitas Technologies for more information. www.excelitas.com TPGAD1S0XH_2023_06 Page 1 of 10 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Table 2: Ordering Information Parameter Number of stripes Active Area Size Emitting width1,2 Emitting height1,2 Symbol S A w h TPGAD1S03H TPGAD1S09H 3 75x10 86 225x10 263 10 Unit µm² µm µm Note 1: The emitting area is defined as FWHM(w) x FWHM(h) of the nearfield size at iF. Note 2: Parameter depending on drive current. Please contact Excelitas Technologies for more information. Table 3: Absolute Maximum Ratings Parameter Peak Reverse Voltage Pulse Duration Duty Factor Storage Temperature Symbol VRM tW du TS Value 2 100 0.1 -40 … 105 Units V ns % °C Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4: Emission Specifications Parameter Spectral Width (FWHM) Wavelength junction Temperature Coefficient Package Thermal Resistance1 Divergence Parallel to Junction Plane Divergence Perpendicular to Junction Plane Symbol  Minimum Typical 10 Maximum Units nm Tj 0.25 nm/°C Rth θ|| θ| 70 7.5 25 °C/W ° ° Note 1: Simulated from the Chip Junction to the cathode PCB connection pad. www.excelitas.com Page 2 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Table 5: Electrical Specifications Parameter Peak Optical Power1 Drive Current Forward Voltage2 Threshold Current Series Resistance Bandgap Voltage Drop Package Inductance TPGAD1S03H TPGAD1S09H Symbol Minimum Typical Maximum Minimum Typical Maximum Unit P 18 20 65 70 W iF 10 30 A VF 11 13.5 V iTh 0.75 1.75 A RS 0.454 0.23 Ω Vg 6.5 6.5 V LP 1.6 1.6 nH Note 1: at iF Note 2: As estimated by 𝑉𝐹 = 𝑅𝑆 𝑖𝐹 + 𝑉𝑔 . Figure 1: Laser Package Dimension TPGAD1S03H / TPGAD1S09H www.excelitas.com Page 3 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Figure 2: Typical P vs. iF Figure 3: Typical Emission Spectrum . a . la v si y p . . la v as a a i c av l Figure 5: Typical P vs. Tj a av l p Figure 4: Typical λ vs. Tj c T c p a Figure 6: Typical θ| T p a Figure 7: Typical θ|| . . si y . si y . . . . . p www.excelitas.com ic la a all l l Page 4 of 10 l TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Information Excelitas Technologies’ pulsed semiconductor laser, emitting at 905nm in the near IR, uses a multi-layer monolithic chip design. The laser diode is mounted on an FR4 substrate leadless laminate carrier (LLC) with excellent thermal management. This is intended for both surface mount applications and hybrid integration. The encapsulate material is an epoxy resin for low cost and high-volume manufacturing. The package design and assembly processing techniques are such that the die positioning is well controlled to the reference surfaces. This aids in the alignment of optical elements to the package and is superior to many of the commercially available plastic lead frame TO-18 and SMD style packages in the market. The SMD package can be mounted with laser beam propagation horizontally or vertically to the PCB surface. The beam propagation possesses a 25° divergence in the direction perpendicular to the chip surface and 7.5° divergence parallel to the chip surface. The output power shows an excellent stability over the full MIL specification temperature range. Our quantum well laser design offers rise and fall times of < 1 ns. However, the drive circuit layout and mounting inductance play a dominant role and should be designed in accordance with the desired optical pulse width. The peak wavelength at 905 nm is centered near the maximum responsivity of most silicon photodiodes. The laser wavelength matches especially well with devices from the Excelitas EPI-APD C30737 family. The devices are ideally suited for applications where cost is a primary concern and high-volume production capacity is required. Unconnected laser dies as shipped cannot emit light. Light emission requires an installation into an electrical driver circuit. www.excelitas.com Page 5 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Principle of operation The light output of a laser diode is proportional to the current running through the laser by pulsing it in the forward bias direction. A simple way of allowing a large current to flow within nanoseconds through the laser is to discharge a large capacitor into the laser by closing a GaN-FET. Excelitas recommends the usage of a low-side driver to operate the laser. A detailed description of the circuitry to recharge the capacitors is omitted here since many options are available on the market. The voltage on the capacitors and discharge time will dictate the current flow in the laser. Electrical circuits should be designed to protect the diodes from high current and reverse voltage transients. Optimum long-term reliability will be attained with the semiconductor at or below room temperature. Adequate heat sinking should be employed, particularly when operated at maximum duty cycle. Package inductance When narrow pulse widths are required, the system designer must take care that circuit inductance is kept to a minimum. Using a low inductance package will reduce the peak voltage required to obtain the desired drive current. For example, to obtain approximate Gaussian pulse shapes of 40 ns and 1 ns, the below voltage should be considered in addition to the typical forward voltage: • 40 ns: o 𝑡𝑝 = 40 ns, 𝑡𝑟 = 20 ns o 𝐼𝐹 = 30 A, 𝐿𝑃 = 1.6 nH o 𝑉𝑃 = • 1.6 nH x 30 A 20ns = 2.4 V 1 ns: o 𝑡𝑝 = 1 ns, 𝑡𝑟 = 0.5 ns o 𝐼𝐹 = 30 A, 𝐿𝑃 = 1.6 nH o 𝑉𝑃 = www.excelitas.com 1.6 nH x 30 A 0.5ns = 96 V Page 6 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Testing methods Excelitas verifies the electro optical specifications on every shipped unit. Visual inspection during fabrication is performed as per our standard and failed lasers are removed. Packaging and shipping For sampling quantities, lasers are placed in Waffle Packs. For production quantities, lasers are placed in Tape & Reel, according to Figure 8. Orientation (vertical or horizontal) needs to be specified upon order in T&R. MSL Rating This series of laser diodes comply with a Moisture Sensitivity Level (MSL) rating of 3 as defined in IPC/JEDECJ-STD-033C. This allows for up to 168 hour floor life at < 30°C / 60%RH once removed from the sealed reel packaging. For complete details refer to the IPC/JEDEC- J-STD-033C specification. Storage and handling This laser is a static-sensitive device. Therefore, Excelitas highly recommends following the below notes: - Keep unused devices in ESD-safe material Protect devices from static discharge and static fields Keep Reels inside their moisture barrier bags until assembly. Respect the MSL rating. If a manual picking method is necessary, use a non-marring tweezer to pick the laser by the short sides only. Precautions should be taken to avoid reverse polarity of power supply. Reversed polarity of power supply above the breakdown voltage listed under “Absolute Maximum Ratings” results in a destroyed unit. www.excelitas.com Page 7 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Figure 8: Tape and Reel Packaging Dimensions - www.excelitas.com Page 8 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding Table 6: Reflow Solder Profile T Profile Feature Symbol Typical Units Minimum Sparkling Temperature TSmin 150 °C Maximum Sparkling Temperature TSmax 200 °C Sparkling Time tS 75 s Minimum Reflow Temperature TL 217 °C Peak Temperature TP 244 °C Reflow Time tL 65 s Time within TP - 5°C tP 25 s Ramp Down Rate ΔTc 2 °C/s p a The following reflow solder profile is a typical used profile for SAC305 solder alloys. Specific solder parameters depend on the solder alloy used. Ti s For Your Safety: Laser Radiation Under operation, these devices produce invisible electromagnetic radiation that may be harmful to the human eye. To ensure that these laser components meet the requirements of Class IIIb laser products, they must not be operated outside their maximum ratings. Power supplies used with these components must be such that the maximum peak forward current cannot be exceeded. It is the responsibility of the user incorporating a laser into a system to certify the Class of use and ensure that it meets the requirements of the ANSI or appropriate authority. Further details may be obtained in the following publications: 21CFR 1040.10 – “Performance Standards for Light Emitting Products (Laser Products)” ANSI Z136.1 – “American National Standard for Safe use of Lasers” IEC 60825-1 – “Safety of Laser Products” www.excelitas.com Page 9 of 10 TPGAD1S0XH_2023_06 Surface Mount 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Commercial Range Finding RoHS Compliance This series of APD diodes are designed and built to be fully compliant with the European Union Directive on restrictions of the use of certain hazardous substances in electrical and electronic equipment. Warranty A standard 12-month warranty following shipment applies. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 7,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+65) 6775 2022 (Main number) Telephone: (+65) 6770 4366 (Customer Service) Fax: (+65) 6778-1752 Contact us at http://www.excelitas.com/contact For a complete listing of our global offices, visit www.excelitas.com/locations © 2023 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 10 of 10 TPGAD1S0XH_2023_06