DPGEW1S09H

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications. Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad laser at 225 µm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 W. The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity lasers in hermetic metal packages and are ideally suited for high volume applications. The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area. The laser chips of the PGEW family feature stripe widths of 75 and 225 µm and come as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW) epi-cavity version. These devices possess a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane. The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD). Where fiber coupling applications are concerned, the transverse spacing of the epi-cavity active area concentrates more optical power into a smaller geometry allowing for increased optical power coupling into optical fibers. Intensity of light is shown from single-cavity, dual-cavity, triplecavity and quad-cavity lasers. Key Features       Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area Peak power over 100 W at 20 ns pulse width High reliability Small emitting areas increase fiber coupled output Lower cost plastic packaging for high volume RoHS compliant Applications     Laser range finding Laser-based speed enforcement IR-illumination Laser skin therapy Peak wavelength is centered near the maximum responsivity of most silicon photodiodes. The PGEW lasers match especially well with devices from the Excelitas epi-APD family C30737. The devices are ideally suited for applications where cost is a primary concern and high volume production capacity is required. www.excelitas.com Page 1 of 6 PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for Commercial Range Finding Table 1: PGEW Pulsed Laser Family Selection Guide Device Typical peak power Total # of at iFM, 100 ns, 10A at iFM, 100 ns, 30A emitting 3 mils (75 µm) 9 mils (225 µm) stripes stripe width stripe width Description PGEW1SXXH Single chip laser – Single epi-cavity 1 6.5 W 23 W DPGEW1SXXH Single chip laser – Double epi-cavity 2 13 W 45 W TPGEW1SXXH Single chip laser – Triple epi-cavity 3 20 W 70 W QPGEW1SXXH Single chip laser – Quad epi-cavity 4 25 W 85 W Table 2: Maximum Ratings Parameter Symbol Min Max Units Peak reverse voltage VRM 2 V Pulse duration tW 100 ns Duty factor du 0.1 % Storage temperature TS -55 105 °C Operating temperature TOP -55 85 °C +260 °C Soldering for 5 seconds (leads only) Table 3: Generic Electro Optical Specifications at 23°C Parameter Symbol Min Typ Max Center wavelength of spectral envelope λC Spectral bandwidth at 50% intensity points Δλ 5 nm Δλ/ΔT 0.25 nm/°C Beam spread (50% peak intensity) parallel to junction plane Θ|| 10 degrees Beam spread (50% peak intensity) perpendicular to junction plane Θ| 25 degrees Wavelength temperature coefficient 895 905 Units 915 nm Table 4: 75µm Stripe Width Family: Operating Characteristics at TOP=23°C, iFM=10A, tW=100ns, prr =1kHz Parameter POmin Minimum Optical Power at iFM POtyp Typical Optical Power at iFM # of Emitting stripes Emitting area Maximum Peak forward Current iFM Typical lasing threshold current iTH 2 Typical Forward voltage at iFM VF Typical Series Resistance R Typical Bandgap Voltage Drop Vg 1. 2. PGEW1S03H DPGEW1S03H TPGEW1S03H QPGEW1S03H1 Units 6 6.5 1 75 X 1 10 0.5 2.4 0.10 1.4 12 13 2 75 X 5 10 0.75 6.4 0.23 4.1 18 20 3 75 X 10 10 0.75 22.5 25 4 75 X 15 10 0.75 10.6 0.41 6.5 14.7 0.52 9.5 Operating pulse width for the QPGEW1S03H is 50ns Excluding the voltage drop contribution due to the inductive element of the package, as estimated by www.excelitas.com Page 2 of 6 W W µm A A V Ω V . PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for Commercial Range Finding Table 5: 225µm Stripe Width Family: Operating Characteristics at TOP=23ºC, iFM=30A, tW=100ns, prr =1kHz PGEW1S09H DPGEW1S09H TPGEW1S09H QPGEW1S09H3 Units Parameter POmin Minimum Optical Power at iFM POtyp Typical Optical Power at iFM # of Emitting stripes Emitting area Maximum Peak forward Current iFM Typical lasing threshold current iTH 4 Typical Forward voltage at iFM VF Typical Series Resistance Rs Typical Bandgap Voltage Drop Vg 3. 4. 21 23 1 225 X 1 30 1.5 3.2 0.06 1.4 42 45 2 225 X 5 30 1.75 65 70 3 225 X 10 30 1.75 78 85 4 225 X 15 30 1.75 8 0.13 4.1 12.8 0.21 6.5 17.3 0.26 9.5 W W µm A A V Ω V Operating pulse width for the QPGEW1S03H is 50ns Excluding the voltage drop contribution due to the inductive element of the package, as estimated by . Ordering Guide X P G A X Double active area D Triple active area T Quadruple active area Q Pulsed X S XX H P G 905 nm nominal centre wavelength E ± 10 nm centre wavelength tolerance Plastic T1 ¾W package W Single chip stack 1 Stackable chip S 0.003“ wide laser stripe (75 µm) 03 0.009“ wide laser stripe (225 µm) 09 RoHS compliance H 100 100 90 90 Relative Radiant Intensity [%] Total Peak Radiant Intensity as a ratio of the Maximum Output Power at the Maximum Rated Current [%] Electro-Optical Characteristics 80 70 60 50 40 30 20 10 Figure 1 LEFT: Total Peak Radiant Intensity vs. Peak drive Current 80 70 60 50 RIGHT: Spectral Distribution Plot 40 30 20 10 0 0 10 20 30 40 50 60 70 80 Peak Drive Current as a ratio of the Maximum Rated Current www.excelitas.com 90 100 0 880 Page 3 of 6 890 900 910 Wavelength [nm] 920 930 PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers 100 90 80 70 60 50 40 30 20 10 0 Relative Radiant Intensity [%] Relative Radiant Intensity [%] Low-Cost High-Power Laser-Diode Family for Commercial Range Finding -30 -20 -10 0 10 Angle [degrees] 20 30 LEFT: Far field Pattern Parallel to Junction Plane RIGHT: Far field Pattern Perpendicular to Junction Plane -50 -40 -30 -20 -10 0 10 20 Angle [degrees] 30 40 50 Figure 3 1000 Radiant Intensity vs. Pulse Width for Safe Operation Relative Radiant Intensity [%] Relative Radiant Intensity [%] 1000 Figure 2 100 90 80 70 60 50 40 30 20 10 0 100 LEFT: PGEW, DPGEW and TPGEW lasers 100 Safe Operating Region 10 Safe Operating Region RIGHT: QPGEW lasers 10 1 10 Pulse width at FWHM [ns] 100 1 10 Pulse width at FWHM [ns] 100 Figure 4: Package Drawings (W package) Dimensions are in mm [inches], are for reference only and subject to change without notice. www.excelitas.com Page 4 of 6 PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for Commercial Range Finding Operating Conditions The laser is operated by pulsing current in the forward bias direction. The Excelitas warranty applies only to devices operated within the maximum rating, as specified. Exceeding these conditions is likely to cause permanent “burn off” damage to the laser facet and consequently a significant reduction in optical power. Operating the devices at increased duty cycles will ultimately and irreparably damage the crystal structure due to internal heating effects. Diodes are static sensitive and suitable precautions should be taken when removing the units from their antistatic containers. Circuits should be designed to protect the diodes from high current and reverse voltage transients. Voltages exceeding the reverse breakdown of the semiconductor junction are particularly damaging and have been shown to cause degradation of power output. Although the devices will continue to perform well at elevated temperatures for some thousands of hours, defect mechanisms are accelerated. Optimum long term reliability will be attained with the semiconductor at or below room temperature. Adequate heat sinking should be employed when operated at maximum duty factor. For Your Safety Laser Radiation: Under operation, these devices produce invisible electromagnetic radiation that may be harmful to the human eye. To ensure that these laser components meet the requirements of Class IIIb laser products, they must not be operated outside their maximum ratings. Power supplies used with these components must be such that the maximum peak forward current cannot be exceeded. It is the responsibility of the user incorporating a laser into a system to certify the Class of use and ensure that it meets the requirements of the ANSI or appropriate authority. Further details can be obtained in the following publications: 21CFR 1040.10 – “Performance Standards for Light Emitting Products (Laser Products)” ANSI Z136.1 – “American National Standard for Safe Use of lasers” IEC 60825-1 – “Safety of Laser Products” RoHS Compliance This series of laser diodes are designed and built to be fully compliant with the European Union Directive 2011/65/EU – Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. www.excelitas.com Page 5 of 6 PGEW Multi-epi series Rev.2016-05 PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for Commercial Range Finding Warranty A standard 12-month warranty following shipment applies. Any warranty is null and void if the package window has been opened. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 5,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450 424 3300 Toll-free: (+1) 800 775 6786 Fax: (+1) 450 424 3345 detection@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 detection.europe@excelitas.com Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+65) 6775 2022 (Main number) Telephone: (+65) 6770 4366 (Customer Service) Fax: (+65) 6778-1752 detection.asia@excelitas.com For a complete listing of our global offices, visit www.excelitas.com/locations © 2013 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 6 of 6 PGEW Multi-epi series Rev.2016-05