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SFH4580-Z

SFH4580-Z

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    DIP

  • 描述:

    EMITTERIR880NM100MARADIAL

  • 数据手册
  • 价格&库存
SFH4580-Z 数据手册
GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR® Gehäuse GaAlAs Infrared Emitters (880 nm) in SMR® Package SFH 4580 SFH 4585 SFH 4580 SFH 4585 Wesentliche Merkmale Features • • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad SMR® (Surface Mount Radial) Gehäuse Für Oberflächenmontage geeignet Gegurtet lieferbar Gehäusegleich mit Fotodiode SFH 2500/ SFH 2505 • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • UL-Freigabe • • • • • Anwendungen Applications • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern • Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb • Sensorik • Diskrete Lichtschranken • Diskrete Optokoppler • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Remote control for steady and varying intensity • Sensor technology • Discrete interrupters • Discrete optocouplers Very highly efficient GaAlAs-LED SMR® (Surface Mount Radial) package Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 • High reliability • Spectral match with silicon photodetectors • UL-approval Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms) Radiant intensity grouping 1) Ie (mW/sr) SFH 4580 Q62702-P1806 ≥ 25 SFH 4585 Q62702-P1799 1) gemessen bei einem Raumwinkel Ω = 0.01 sr measured at a solid angle of Ω = 0.01 sr 2002-08-20 1 SFH 4580, SFH 4585 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Durchlaßstrom Forward current IF 100 mA Stoßstrom, tp = 10 µs, D = 0 Surge current IFSM 2.5 A Verlustleistung Power dissipation Ptot 200 mW Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm RthJA 375 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA λpeak 880 nm Spektrale Bandbreite bei 50% von Irel Spectral bandwidth at 50% of Irel IF = 100 m A ∆λ 80 nm Abstrahlwinkel Half angle ϕ ± 15 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.3 × 0.3 mm Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top H 3.9 … 4.5 mm Kennwerte (TA = 25 °C) Characteristics 2002-08-20 2 SFH 4580, SFH 4585 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω tr, tf 0.6/0.5 µs Kapazität Capacitance VR = 0 V, f = 1 MHz Co 15 pF VF VF 1.50 (≤ 1.8) 3.00 (≤ 3.8) V V Sperrstrom, Reverse current VR = 5 V IR 0.01 (≤ 1) µA Gesamtstrahlungsfluß, Total radiant flux IF = 100 mA, tp = 20 ms Φe 25 mW Temperaturkoeffizient von Ie bzw. Φe, TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCλ 0.25 nm/K Durchlaßspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA 2002-08-20 3 SFH 4580, SFH 4585 Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Wert Value Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min ≥ 25 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Ie typ 225 mW/sr 2002-08-20 4 SFH 4580, SFH 4585 Relative Spectral Emission Irel = f (λ) Single pulse, tp = 20 µs OHR00877 100 Ιe Ι e (100mA) Max. Permissible Forward Current IF = f (T A ) I F mA 10 1 100 60 10 0 75 40 10 -1 50 20 10 -2 25 10 -3 800 850 900 950 nm 1000 λ 10 1 10 2 10 3 mA 10 4 ΙF OHR00886 10 4 OHR00881 10 1 10 0 Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter Forward Current IF = f (VF), single pulse, tp = 20 µs mA A OHF01534 125 80 0 750 ΙF OHR00878 10 2 % Ι rel Ie = f (IF ) Ie 100 mA Radiant Intensity 0 0 10 20 30 40 50 60 70 80 ˚C 100 T Forward Current vs. Lead Length between the Package Bottom and the PC-Board IF = f (I), TA = 25 °C OHR00949 120 mA ΙF D = 0.005 0.01 0.02 0.05 10 0 Ι F 100 10 3 0.1 0.2 80 10 -1 60 0.5 10 2 10 DC 40 -2 D= 10 -3 0 1 2 3 4 5 6 V VF tp T tp 20 ΙF T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 8 10 1 s 10 2 tp Radiation Characteristics Irel = f (ϕ) 40 30 20 10 ϕ 0 OHF00300 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2002-08-20 0.8 0.6 0.4 0 20 40 60 80 5 100 120 0 0 5 10 15 20 25 mm 30 SFH 4580, SFH 4585 Maßzeichnung Package Outlines SFH 4580 2.54 (0.100) spacing 14.7 (0.579) 13.1 (0.516) Cathode 4.5 (0.177) 3.9 (0.154) 2.7 (0.106) 2.4 (0.094) 4.8 (0.189) 4.4 (0.173) 3.7 (0.146) 3.3 (0.130) 2.05 (0.081) R 1.95 (0.077) -0.1...0.2 (-0.004...0.008) 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6960 SFH 4585 2.54 (0.100) spacing 15.5 (0.610) 14.7 (0.579) Cathode 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) -0.15...0.15 (-0.006...0.006) 2.7 (0.106) 2.4 (0.094) 4.8 (0.189) 4.4 (0.173) 8.0 (0.315) 7.4 (0.291) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6961 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-08-20 6 SFH 4580, SFH 4585 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-08-20 7
SFH4580-Z 价格&库存

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