GA01PNS150-220

GA01PNS150-220   Silicon Carbide PiN Diode Features      A 15 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching K Advantages Applications  Industry’s first > 10 kV power rectifier  Reduced stacking  Reduced system complexity/Increased reliability      Voltage Multiplier Ignition/Trigger Circuits Oil/Downhole Lighting Defense Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Operating and storage temperature Symbol VRRM IF IF(RMS) Tj , Tstg Conditions Values 15 1 0.5 -55 to 250 TC ≤ 150 °C TC ≤ 150 °C Unit kV A A °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total reverse recovery charge Qrr Switching time ts Total capacitance C Total capacitive charge QC Conditions min. IF = 1 A, Tj = 25 °C IF = 1 A, Tj = 225 °C VR = 15 kV, Tj = 25 °C VR = 15 kV, Tj = 225 °C VR = 1000 V IF ≤ IF,MAX IF = 1.5 A dIF/dt = 70 A/μs VR = 1000 V Tj = 225 °C IF = 1.5 A VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Values typ. 6.5 4.4 1 5 max. 7.0 5.0 20 100 Unit V µA 558 nC < 236 ns 28 8 7 5.34 pF nC           Sep 2014   http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors Page 1 of 3   Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Turn Off Characteristics at Ik = 0.5 A and VR = 1000 V Figure 5: Typical Turn Off Characteristics at Tj = 225 °C and VR = 1000 V Figure 6: Reverse Recovery Charge vs Cathode Current Sep 2014   GA01PNS150-220 http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors Page 2 of 3 GA01PNS150-220   Figure 7: Reverse Recovery Time vs Cathode Current Revision History Date Revision Comments 2014/09/15 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Sep 2014   http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors Page 3 of 3   GA01PNS150-CAU SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS150-220 device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 15-SEP-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/baredie * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GA01PNS150-220 SPICE Model *  .MODEL GA01PNS150 D + IS 9.71E-12 + RS 2.07 + N 5.7869 + IKF 0.039646 + EG 3.23 + XTI 58 + TRS1 -0.0034 + CJO 2.28E-11 + VJ 2.304 + M 0.376 + FC 0.5 + BV 16000 + IBV 1.00E-03 + VPK 15000 + IAVE 1 + TYPE SiC_PiN + MFG GeneSiC_Semi * * End of GA01PNS150-220 SPICE Model Sep 2014   http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors Page 1 of 1