GAP3SLT33-220FP

GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode TM Silicon Carbide Schottky Diode VRRM = IF (TL ≤ 125°C) = QC = Features • • • • • • • • Package Enhanced Surge and Avalanche Robustness Superior Figure of Merit QC/IF Low VF for High Temperature Operation Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Positive Temperature Coefficient of VF High dV/dt Ruggedness Case RoHS TO-220-FP Advantages • • • • • • • • 3300 V 0.3 A 14 nC K A REACH Applications High System Reliability Optimal Price Performance Improved System Efficiency Reduced Cooling Requirements Increased System Power Density Zero Reverse Recovery Current Easy to Parallel without Thermal Runaway Enables Extremely Fast Switching • • • • • • • • Medical Imaging High Voltage Sensing Oil Drilling Geothermal Instrumentation High Voltage Multipliers High Frequency Rectifiers High Voltage Switching Pulsed Power Absolute Maximum Ratings (At TL = 25°C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage Continuous Forward Current Non-Repetitive Peak Forward Surge Current, Half Sine Wave Symbol VRRM IF Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current i2t Value Diode Ruggedness Power Dissipation Operating and Storage Temperature Apr. 20 Rev 1.4 IF,SM IF,MAX ∫i2dt dV/dt PTOT Tj , Tstg Conditions TL ≤ 125°C, D = 1 TL = 25°C, tP = 10 ms TL = 150°C, tP = 10 ms TL = 25°C, tP = 10 ms TL = 150°C, tP = 10 ms TL = 25°C, tP = 10 µs TL = 25°C, tP = 10 ms VR = 0 ~ 2640 V TL = 25°C Values 3300 0.3 2 1 1.4 1 10 0.02 100 89 -55 to 175 www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP.pdf Unit V A Note A A A A2 s V/ns W °C Fig. 3 Page 1 of 6 GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode TM Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time tS Total Capacitance C Conditions Min. IF = 0.3 A, Tj = 25°C IF = 0.3 A, Tj = 175°C VR = 3300 V, Tj = 25°C VR = 3300 V, Tj = 175°C VR = 1500 V VR = 2000 V IF ≤ IF,MAX dIF/dt = 200 A/µs VR = 1500 V VR = 2000 V VR = 1 V, f = 1MHz VR = 2000 V, f = 1MHz Values Typ. 1.15 1.5 1 10 12 14 Max. 3 10 100 Unit Note V Fig. 1 µA Fig. 2 nC Fig. 7 < 10 ns 93 5 pF Fig. 6 Unit Note °C/W g Nm Fig. 9 Thermal/Package Characteristics Parameter Symbol Thermal Resistance, Junction - Lead Weight Mounting Torque Apr. 20 Rev 1.4 RthJL WT TM Conditions Min. Values Typ. 1.69 2 Screws to Heatsink www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP.pdf Max. 1 Page 2 of 6 GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode Figure 1: Typical Forward Characteristics IF = f(VF,Tj); tP = 250 µs Figure 3: Power Derating Curves PTOT = f(TL); Tj = 175°C Apr. 20 Rev 1.4 TM Figure 2: Typical Reverse Characteristics IR = f(VR,Tj) Figure 4: Typical Junction Capacitance vs Reverse Voltage Characteristics C = f(VR); f = 1MHz www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP.pdf Page 3 of 6 GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode Figure 5: Typical Capacitive Charge vs Reverse Voltage Characteristics TM Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics QC = f(VR); f = 1MHz EC = f(VR); f = 1MHz Figure 7: Forward Curve Model Forward Curve Model Equation: IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m × Tj + n (V) m = -1.42e-03 (V/°C) n = 0.903 (V) Differential Resistance (RDIFF): 1/RDIFF RDIFF(Tj) = a × Tj2 + b × Tj + c (Ω) a = 1.81e-05 (Ω/°C2) b = 0.00878 (Ω/°C) c = 0.725 (Ω) VBI Forward Power Loss Equation: PLOSS = VBI(Tj) × IAVG + RDIFF(Tj) × IRMS2 IF = f(VF,Tj) Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP.pdf Page 4 of 6 GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode TM Package Dimensions TO-220-FP Package Outline 0.102 (2.60) 0.118 (3.00) 0.392 (9.96) 0.408 (10.36) Ø 0.148 (3.750) 0.155 (3.930) 0.167(4.24) 0.183(4.64) 0.045(1.15) 0.055(1.40) 0.254 (6.45) 0.579 0.630 (14.70) (16.00) 0.501 (12.73) 0.347 0.355 (8.82) (9.02) 0.306 (7.77) 0.047(1.20) 0.067(1.70) 0.157(4.00) MAX. 0.530(13.47) 0.550(13.97) 0.091 (2.30) 0.106 (2.70) 0.027(0.70) 0.035(0.90) 0.016(0.40) 0.237(0.60) 0.100 BSC. (2.540) BSC. Recommended Solder Pad Layout Package View 0.12 (3.1) 0.20 (5.1) 0.05 (1.3) K A NOTE 1. CONTROLLED DEIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP.pdf Page 5 of 6 GAP3SLT33-220FP 3300V 0.3A SiC Schottky MPS™ Diode TM RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links • SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP_SPICE.zip • PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP_PLECS.zip • CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-220FP/GAP3SLT33-220FP_3D.zip • Evaluation Boards: https://www.genesicsemi.com/technical-support • Reliability: https://www.genesicsemi.com/reliability • Compliance: https://www.genesicsemi.com/compliance • Quality Manual: https://www.genesicsemi.com/quality www.genesicsemi.com/sic-schottky-mps/ Apr. 20 Rev 1.4 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. The information in this document is subject to change without notice. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 6 of 6