1N3213

1N3212 thru 1N3214R Silicon Standard Recovery Diode VRRM = 400 V - 600 V IF = 15 A Features • High Surge Capability • Types from 400 V to 600 V VRRM DO-5 Package • Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified 1N3212 (R) 1N3213 (R) 1N3214 (R) Unit VRRM 400 500 600 V VRMS 280 350 420 V VDC 400 500 600 V Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Conditions ("R" devices have leads reversed) Continuous forward current IF TC ≤ 150 °C 15 15 15 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 297 297 297 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Unit IF = 15 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 150 °C 1.5 10 10 1.5 10 10 1.5 10 10 μA mA 0.65 0.65 0.65 °C/W V Thermal characteristics Thermal resistance, junction - case RthJC Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3213.pdf 1 1N3212 thru 1N3214R Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3213.pdf 2 1N3212 thru 1N3214R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 5 (DO-203AB) M J K P D B G N C F E A A C A C Stud Stud (R) Inches Min Millimeters Max Max 1/4 –28 UNF A Oct. 2018 Min B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 http://www.diodemodule.com/silicon_products/studs/1n3213.pdf 3