FR40K05

FR40K05 thru FR40MR05 Silicon Fast Recovery Diode VRRM = 800 V - 1000 V IF = 40 A Features • High Surge Capability • Types from 800 V to 1000 V VRRM DO-5 Package • Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A C Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage FR40K(R)05 FR40M(R)05 Unit VRRM 800 1000 V VRMS 560 700 V VDC 800 1000 V Symbol Conditions Continuous forward current IF TC ≤ 100 °C 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 500 500 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol Conditions FR40K(R)05 FR40M(R)05 Unit VF IF = 40 A, Tj = 25 °C VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 125 °C 1.0 25 10 1.0 25 10 μA mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 500 500 nS 0.8 0.8 °C/W IR V Recovery Time Maximum reverse recovery time TRR Thermal characteristics Thermal resistance, junction - case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/fr40k05.pdf 1 FR40K05 thru FR40MR05 Oct. 2018 http://www.diodemodule.com/silicon_products/studs/fr40k05.pdf 2 FR40K05 thru FR40MR05 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 5 (DO-203AB) M J K P D B G N C F E A A C A C Stud Stud (R) Inches Min Millimeters Max Max 1/4 –28 UNF A Oct. 2018 Min B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 http://www.diodemodule.com/silicon_products/studs/fr40k05.pdf 3