1N4593R

1N4588(R) thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 800 V IF =150 A Features • High Surge Capability • Types from 200 V to 800 V VRRM DO-8 Package • Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A C Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit VRRM 200 400 600 800 V VDC 200 400 600 800 V 150 A Parameter Symbol Repetitive peak reverse voltage DC blocking voltage Conditions Continuous forward current IF TC ≤ 110 °C 150 150 150 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 3000 3000 3000 3000 A I2t for fusing Operating temperature Storage temperature I2 t Tj Tstg 60 Hz Half wave 37200 -55 to 150 -55 to 150 37200 -55 to 150 -55 to 150 37200 -55 to 150 -55 to 150 37200 -55 to 150 -55 to 150 A2sec °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit Diode forward voltage VF IF = 150 A, Tj = 110 °C 1.5 1.5 1.5 1.5 V Reverse current IR VR = VRRM, Tj = 110 °C 9.5 9 6.5 5.5 mA 0.35 0.35 0.35 0.35 °C/W Thermal characteristics Thermal resistance, junction case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/1n4593r.pdf 1 1N4588(R) thru 1N4593(R) Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n4593r.pdf 2 1N4588(R) thru 1N4593(R) Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO-8 (DO-205AA) H I F A C D B A C Stud Stud (R) G C E A Inches Min Millimeters Max A Oct. 2018 Min Max 3/8-24 UNF B ----- φ0.930 ----- φ23.5 C 1.050 1.060 26.67 26.92 D 4.300 4.700 109.22 119.38 E ----- 0.690 ----- 17.00 F 0.260 ----- 6.50 ----- G ----- 0.940 ----- 24.00 H ----- 0.600 ----- 15.23 I 0.276 0.286 7.010 7.260 http://www.diodemodule.com/silicon_products/studs/1n4593r.pdf 3