C3D30065D
VRRM = 650 V
Silicon Carbide Schottky Diode
IF (TC=135˚C)
Z-Rec Rectifier
®
Qc = 89 nC**
Features
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= 36 A**
Package
650 Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-247-3
Benefits
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•
•
•
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Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
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Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D30065D
TO-247-3
C3D30065
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
39/78
18/36
15/30
A
TC=25˚C
TC=135˚C
TC=145˚C
Continuous Forward Current
(Per Leg/Device)
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
66*
46*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Peak Forward Surge Current
162
150
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Current
1400
1200
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
Ptot
Power Dissipation(Per Leg/Device)
150
65
W
TC=25˚C
TC=110˚C
Fig. 4
Diode dV/dt ruggedness
200
V/ns
VR=0-600V
131*
112.5*
A2s
-55 to +175
˚C
1
8.8
Nm
lbf-in
dV/dt
∫i2dt
i2t value
TJ , Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
1
Test Conditions
VRRM
IF
*
Value
Per Leg, ** Per Device
C3D30065D Rev. -, 09-2016
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.45
2.0
1.8
2.4
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
Fig. 1
IR
Reverse Current
18.5
38.5
95
378
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
44.5
nC
VR = 400 V, IF = 16 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
877.5
80
64
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
6.2
μJ
VR = 400 V
Fig. 7
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
*
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1*
0.5**
°C/W
Fig. 9
Per Leg, ** Per Device
Typical Performance (Per Leg)
30
TJ = -55 °C
35
TJ = 25 °C
30
TJ = 75 °C
25
TJ = 125 °C
20
TJ = 175 °C
25
IR (μA)
40
Reverse Leakage Current, IRR (uA)
F
Foward Current,
IF (A)
I (A)
45
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward VVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
C3D30065D Rev. -, 09-2016
20
TJ = 175 °C
TJ = 125 °C
15
TJ = 75 °C
10
TJ = 25 °C
TJ = -55 °C
5
0
0
100 200 300 400 500 600 700 800 900
(V) VR (V)
ReverseVVoltage,
R
Figure 2. Reverse Characteristics
Typical Performance (Per Leg)
140
160
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
120
120
100
80
PTot (W)
IF(peak) (A)
100
140
60
40
80
60
40
20
20
0
0
25
50
75
100
125
150
25
175
50
75
TC ˚C
150
1000
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
900
50
700
Capacitance
C (pF) (pF)
(nC) QC (nC)
CapacitiveQCharge,
C
800
40
30
20
600
500
400
300
200
10
100
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
175
Figure 4. Power Derating
Conditions:
TJ = 25 °C
60
125
TC ˚C
Figure 3. Current Derating
70
100
C3D30065D Rev. -, 09-2016
0
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance (Per Leg)
16
1,000
12
10
IFSM (A)
I
(A)
FSM
Capacitance StoredE Energy,
(mJ) EC (µJ)
C
14
8
6
TJ_initial = 25 °C
TJ_initial = 110 °C
100
4
2
10
10E-6
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
100E-6
1E-3
tp (s)
Time,
tp (s)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance (˚C/W)
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D30065D Rev. -, 09-2016
100E-3
1
10E-3
Package Dimensions
ASE
PACKAGE
OUTLINE
Advanced
Package TO-247-3
Semiconductor
Engineering Weihai, Inc.
DWG NO.
98WHP03165A
ISSUE
O
DATE
Sep.05, 2016
POS
A
2.29
2.54
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b3
.113
.133
2.87
3.38
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
IN
e
L
P
TO-247 3LD, Only For Cree
COMPANY
ASE Weihai
SHEET
1 OF 3
Recommended Solder Pad Layout
5.21
.100
E4
TITLE:
4.83
.085
E2
E
R
.205
.090
E3
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
Max
.190
.075
E1
M
I
L
Min
A1
E
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
Millimeters
Max
A2
D2
e
Inches
Min
L1
N
ØP
.037
.049
0.95
1.25
.620
.635
15.75
16.13
.516
.557
13.10
14.15
5.10
Y
R
A
.145
.201
3.68
.039
.075
1.00
1.90
.487
.529
12.38
13.43
.214 BSC
5.44 BSC
.780
.800
.161
.173
.138
4.10
4.40
3.51
3.65
.144
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
17.5° REF
W
3.5° REF
X
4° REF
Part Number
Package
Marking
C3D30065D
TO-247-3
C3D30065
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
C3D30065D Rev. -, 09-2016
20.32
3
all units are in inches
5
19.81
Diode Model (Per Leg)
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.94 + (TJ * -1.0*10-3)
RT = 0.027 + (TJ * 2.8*10-4)
VT
Notes
Y
R
A
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
RT
N
I
M
I
L
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
E
R
P
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D30065D Rev. -, 09-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
