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MBRB10100CTTR

MBRB10100CTTR

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO263

  • 描述:

    Diode Array 1 Pair Common Cathode Schottky 100V Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-2...

  • 数据手册
  • 价格&库存
MBRB10100CTTR 数据手册
MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0735, Rev. - Green Products MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR10…CT TO-220AB Case styles MBRB10…CT D2PAK MBR10…CT-1 TO-262 Mechanical Dimensions: In Inches / mm TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0735, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 4.85 0.25 2.89 0.96 15.6 2.70 1.40 2.20 8° D2PAK TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0735, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 10 80 CT/CT-1 SSG YY WW L MBR1080CT = Device Type = Package type = Forward Current (10A) = Reverse Voltage (80) = Configuration = SSG = Year = Week = Lot Number MBRB1080CT Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR1080CT MBRB1080CT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Condition - Average Forward Current IF(AV) 50% duty cycle @TC =100°C, rectangular wave form Peak One Cycle NonRepetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse Max. MBR1080CT MBRB1080CT MBR1080CT-1 90 MBR1090CT MBRB1090CT MBR1090CT-1 100 MBR10100CT MBRB10100CT MBR10100CT-1 5(Per leg) 10(Per device) Units V 120 A 80 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0735, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Symbol VF1 VF2 Reverse Current (per leg) * IR1 IR2 Junction Capacitance (per leg) Typical Series Inductance (per leg) Voltage Rate of Change * CT LS dv/dt Condition @ 3A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = 25 °C @ 3 A, Pulse, TJ = 125 °C @ 5 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.78 0.85 0.65 0.75 1.00 Units V V mA 15 mA 300 pF 8.0 nH 10,000 V/μs Specification -55 to +150 -55 to +150 2.0 Units °C °C °C/W Pulse Width < 300µs, Duty Cycle
MBRB10100CTTR 价格&库存

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