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SDURF1030CTR

SDURF1030CTR

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO-220-3隔离片

  • 描述:

    DIODE ARRAY GP 300V ITO220AB

  • 数据手册
  • 价格&库存
SDURF1030CTR 数据手册
SANGDEST MICROELECTRONICS SDURF1030CT(CTR) Technical Data Data Sheet N0156, Rev. - Green Products SDURF1030CT(CTR) ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Features: • • • • • • • Fully Molded Isolation Ultra-Fast Recovery Low Forward Voltage Drop High Surge Capability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request SDURF1030CT SDURF1030CTR Mechanical Dimensions: In mm SYMBOL A A1 A2 A3 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 L3 ΦP1(上口) ΦP2(下口) Q Θ1 Θ2 Θ3 Θ4 Θ5 MIN. 4.30 1.10 2.80 2.50 0.50 1.10 1.50 1.20 1.60 0.55 14.80 9.96 6.50 12.70 1.60 0.80 0.60 3.30 2.99 2.50 TYP. 4.50 1.30 3.00 2.70 0.60 1.20 1.60 1.30 1.70 0.60 15.00 10.16 2.55 5.10 6.70 13.20 1.80 1.00 0.80 3.50 3.19 2.70 5° 4° 10° 5° 5° MAX. 4.70 1.50 3.20 2.90 0.75 1.35 1.75 1.45 1.85 0.75 15.20 10.36 6.90 13.70 2.00 1.20 1.00 3.70 3.39 2.90 OPTION 1 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURF1030CT(CTR) Technical Data Data Sheet N0156, Rev. - Green Products OPTION 2(SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURF1030CT(CTR) Technical Data Data Sheet N0156, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SDUR F 10 30 CT/CTR SSG YY WW L SDURF1030CT = Device Type = Package Type = Forward Current (10A) = Reverse Voltage (300V) = Configuration = SSG = Year = Week = Lot Number SDURF1030CTR Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) SDURF1030CT/CTR Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Average Forward Current IF (AV) Peak One Cycle NonRepetitive Surge Current IFSM Condition 50% duty cycle TC=112℃, rectangular wave form 8.3ms, Half Sine pulse Max. 300 Units V 10 A 80 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURF1030CT(CTR) Technical Data Data Sheet N0156, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop(per leg) Reverse Current Junction Capacitance (per leg) Max. Reverse Recovery Time Symbol VF IR CT trr Condition @ IF= 5A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = 5V, TC = 25 °C fSIG = 1MHz IF=500mA, IR=1A,and Irm=250mA Max. Units 1.3 V 30 μA 80 pF 45 ns Specification -55 to +150 -55 to +150 Units ℃ ℃ 3.5 ℃ /W 2 g * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURF1030CT(CTR) Technical Data Data Sheet N0156, Rev. - Green Products 100 100 Instantaneous Reverse Current ( μ A) Junction Capacitance (PF) 1000 TJ=25℃ 10 1 0 5 10 15 20 25 30 35 40 10 TJ=125℃ 1 0.1 TJ=25℃ 0.01 0.001 10 20 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) 30 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0156, Rev. - SDURF1030CT(CTR) Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SDURF1030CTR 价格&库存

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SDURF1030CTR
    •  国内价格
    • 1+2.89138
    • 10+2.39955
    • 50+2.15363

    库存:3

    SDURF1030CTR
      •  国内价格
      • 1+6.10880
      • 10+2.77650
      • 50+2.49500
      • 55+2.03870
      • 151+1.92730
      • 1000+1.85420

      库存:0