MBR2060CTP

MBR2060CTP

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO-220-3

  • 描述:

    特性:150℃ Tj 工作。 中心抽头配置。 低正向压降。 高纯度、高温环氧树脂封装,增强机械强度和防潮性。 高频工作。 保护环,增强耐用性和长期可靠性。应用:开关电源。 转换器

  • 数据手册
  • 价格&库存
MBR2060CTP 数据手册
SANGDEST MICROELECTRONICS MBR2060CTP Technical Data Data Sheet N0446, Rev. - Green Products MBR2060CTP SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 ℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm Symbol A A1 A2 b b1 c D D1 E e e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min Typical Max 4.42 4.57 4.72 1.17 1.27 1.37 2.59 2.69 2.89 0.71 0.81 0.96 1.27 0.36 0.38 0.61 14.94 15.24 15.54 8.85 9.00 9.15 10.01 10.16 10.31 2.54 5.06 6.04 6.24 6.44 12.7 13.56 13.78 3.5 3.74 3.84 4.04 2.54 2.74 2.94 7° 3° 4° TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR2060CTP Technical Data Data Sheet N0446, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR 20 60 CTP SSG YY WW L = Device Type = Forward Current (20A) = Reverse Voltage (60V) = Configuration = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) MBR2060CTP Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Output Current(per device) Peak One Cycle Non-Repetitive Surge Current (per leg) Symbol VRWM Condition - Io 50% duty cycle @TC =80°C, rectangular wave form 20 A 8.3 ms, half Sine pulse 150 A IFSM Max. Units 60 V • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR2060CTP Technical Data Data Sheet N0446, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current (per leg) * Junction Capacitance (per leg) Voltage Rate of Change * Symbol VF1 IR1 CT dv/dt Condition @ 10A, Pulse, TJ = 25 °C @VR = rated VR Pulse TJ = 25 °C @VR = 4V, TC = 25 °C fSIG = 1MHz - Max. Units 0.80 V 1.0 mA 400 pF 10,000 V/μs Specification -55 to +150 -55 to +150 Units °C °C 2.3 °C/W 2 g Pulse Width < 300µs, Duty Cycle
MBR2060CTP 价格&库存

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MBR2060CTP
  •  国内价格 香港价格
  • 1+11.734531+1.52102
  • 50+5.4625350+0.70805
  • 100+4.84754100+0.62834
  • 500+3.76886500+0.48852
  • 1000+3.421361000+0.44348
  • 2000+3.128962000+0.40558
  • 5000+2.812575000+0.36457
  • 10000+2.6170410000+0.33922

库存:710