MBR30100CTP

SANGDEST MICROELECTRONICS MBR30100CTP Technical Data Data Sheet N1289, Rev. - Green Products MBR30100CTP SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm Symbol A A1 A2 b b1 c D D1 E e e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min Typical Max 4.42 4.57 4.72 1.17 1.27 1.37 2.59 2.69 2.89 0.71 0.81 0.96 1.27 0.36 0.38 0.61 14.94 15.24 15.54 8.85 9.00 9.15 10.01 10.16 10.31 2.54 5.06 6.04 6.24 6.44 12.7 13.56 13.78 3.5 3.74 3.84 4.04 2.54 2.74 2.94 7° 3° 4° TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR30100CTP Technical Data Data Sheet N1289, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR 30 100 CTP SSG YY WW L = Device Type = Forward Current (30A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) MBR30100CTP Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current(per device) Peak Repetitive Forward Current(per leg) Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFRM IFSM Condition 50% duty cycle @TC = 133°C, rectangular wave form Rated VR square wave, 20KHz TC = 133°C Max. 100 30 Units V A 20 A 8.3 ms, half Sine pulse 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR30100CTP Technical Data Data Sheet N1289, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current (per leg)* Symbol VF1 VF2 IR1 IR2 Junction Capacitance (per leg) Voltage Rate of Change * CT dv/dt Condition @ 15 A, Pulse, TJ = 25 °C @ 15 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz - Max. 0.85 0.70 1.00 Units V V mA 6.0 mA 400 pF 10,000 V/μs Specification -55 to +150 -55 to +150 2.0 Units °C °C 50 °C/W 0.50 °C/W 2 g Pulse Width < 300µs, Duty Cycle