MBRF40150CT

SANGDEST MICROELECTRONICS MBRF40150CT Green Products Technical Data Data Sheet N0857, Rev. A MBRF40150CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150°°C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm / Inches OPTION 1(CJ) OPTION 2(HD) Dim Min Max Min A 4.4 4.6 Max 4.30 4.70 b 0.6TYP 0.50 0.75 b1 1.3TYP 1.30 1.40 b2 1.7TYP 1.70 1.80 b3 1.6TYP 1.50 1.75 b4 1.2TYP 1.10 1.35 0.50 0.75 D C 14.8 15.1 14.80 15.20 E 10.06 10.26 9.96 10.36 e 0.60TYP 2.55TYP 2.54TYP F 2.9 3.1 2.80 3.20 G 6.5 6.9 6.50 6.90 L 12.7 13.7 13.2 12.8 L1 3.4 3.8 3.60 4.00 L2 2.6 3.0 - - Q 2.5 2.9 2.50 2.90 Q1 2.5 2.9 ØR 3.5REF 2.70REF 3.50REF • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF40150CT Green Products Technical Data Data Sheet N0857, Rev. A OPTION 3 OPTION 4 Dim Min Max Min Max A 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 C 0.36 0.53 0.45 0.60 D 15.67 16.07 15.67 16.07 E 9.96 10.36 9.96 10.36 e 2.54TYP 2.54 BSC F 2.34 2.76 2.34 2.74 G 6.50 6.90 6.48 6.88 L 12.37 12.77 12.78 13.18 L1 2.23 2.63 3.03 3.43 Q 2.56 2.96 2.56 2.96 Q1 3.10 3.50 3.10 3.50 ØR 2.98 3.38 3.08 3.28 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF40150CT Green Products Technical Data Data Sheet N0857, Rev. A OPTION 5(SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF40150CT Green Products Technical Data Data Sheet N0857, Rev. A Marking Diagram: Where XXXXX is YYWWL MBR F 40 150 CT SSG YY WW L = Device Type = Package type = Forward Current (40A) = Reverse Voltage (150V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) MBRF40150CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =110°C, rectangular wave form 8.3 ms, half Sine pulse Max. 150 20(per leg) 40(Per device) 250 Units V A A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF40150CT Green Products Technical Data Data Sheet N0857, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current at DC condition (per leg) Max. Reverse Current (per leg)* Non-Repetitive Avalanche Energy Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * Symbol VF1 VF2 IR1 IR2 EAS CT LS dv/dt Condition @ 20A, Pulse, TJ = 25 °C @ 20 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C TJ = 25 °C, IAS = 2 A, L = 1mH @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.95 0.92 1.0 Units V V mA 15.0 mA 2 mJ 900 pF 8.0 nH 10,000 V/µs Specification -55 to +150 -55 to +150 3.0 Units °C °C °C/W 2 g Pulse Width < 300µs, Duty Cycle