ST3045C
STB3045C
STF3045C
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1311, Rev. B
Green Products
ST3045C/STB3045C/STF3045C
SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Ultralow forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
ST3045C
Case styles
STB3045C
STF3045C
TO-220AB
D2PAK
ITO-220AB
Mechanical Dimensions: In Inches / mm
TO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST3045C
STB3045C
STF3045C
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1311, Rev. B
Green Products
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
0.25BSC
5°
4°
4°
4.85
0.25
2.89
0.96
15.6
2.70
1.40
2.20
8°
D2PAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST3045C
STB3045C
STF3045C
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1311, Rev. B
Green Products
SYMBOL
A
A1
A2
A3
b
b1
b2
b3
b4
c
D
E
e
e1
H1
L
L1
L2
L3
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
1.20
1.60
0.55
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
1.30
1.70
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
3.50
3.19
2.70
5°
4°
10°
5°
5°
MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
1.45
1.85
0.75
15.20
10.36
6.90
13.70
2.00
1.20
1.00
3.70
3.39
2.90
ITO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST3045C
STB3045C
STF3045C
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1311, Rev. B
Green Products
Marking Diagram:
Where XXXXX is YYWWL
S
T
B/F
30
45
C
SSG
YY
WW
L
ST3045C
STB3045C
= Device Type
= Ultralow VF
= Package type
= Forward Current (30A)
= Reverse Voltage (45V)
= Configuration
= SSG
= Year
= Week
= Lot Number
STF3045C
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
Shipping
TO-220AB(Pb-Free)
50pcs / tube
STB3045C
D²PAK(Pb-Free)
800pcs / reel
STF3045C
ITO-220AB(Pb-Free)
50pcs / tube
ST3045C
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Condition
-
Max.
45
Units
V
Average Forward Current
IF(AV)
50% duty cycle @TC =135°C
rectangular wave form
30
A
Peak One Cycle NonRepetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
200
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST3045C
STB3045C
STF3045C
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1311, Rev. B
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Reverse Current at DC
condition (per leg)
Reverse Current (per leg) *
Junction Capacitance
(per leg)
*
IR1
IR2
CT
Condition
@ 7.5A, Pulse, TJ = 25 °C
@ 15A, Pulse, TJ = 25 °C
@ 7.5A, Pulse, TJ = 125 °C
@ 15A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Typ.
0.44
0.49
0.33
0.39
Max.
0.53
0.57
0.42
0.48
Units
0.21
2.0
mA
120
150
mA
868
-
pF
V
V
Pulse Width < 300µs, Duty Cycle
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