403CMQ100

SANGDEST MICROELECTRONICS 403CMQ SERIES Technical Data Data Sheet N0990, Rev. E 403CMQ SERIES SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Product contain Pb All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches 403CMQ080 403CMQ080R Please Note: Suffix “R” Denotes For Reversed Polarity PRM4 (Isolated) MARKING, MOLDING RESIN st nd Marking for 403CMQ080/R, 1 row SS YYWWL, 2 row 403CMQ080/403CMQ080R Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL: 94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 403CMQ SERIES Technical Data Data Sheet N0990, Rev. E Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =85°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS IAR 80 100 200 400 Max. 403CMQ080/R 403CMQ100/R per leg per device Units V A 3960 A TJ=25℃,IAS=1A,L=30mH 15 mJ Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5×VR typical 1 A Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Symbol VF1 VF2 Reverse Current (per leg) * Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * IR1 IR2 CT LS dv/dt Condition @ 200A, Pulse, TJ = 25 °C @ 400A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 125 °C @ 400A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.83 0.97 0.69 0.82 6 140 Units 5500 pF 5.0 nH 10,000 V/μs Specification -55 to +175 -55 to +175 Units °C °C V V mA mA Pulse Width < 300µs, Duty Cycle