401CMQ045

SANGDEST MICROELECTRONICS 401CMQ… SERIES Technical Data Data Sheet N1224, Rev. B Green Products 401CMQ035/401CMQ040/401CMQ045 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • 175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches PRM4 (Isolated) MARKING,MOLDING RESIN st nd Marking for 401CMQ035/040/045, 1 row SS YYWWL, 2 row 401CMQ035/040/045 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 401CMQ… SERIES Technical Data Data Sheet N1224, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =116°C, rectangular wave form IFSM 8.3 ms, half Sine pulse 4140 A EAS TJ=25℃,IAS=40A,L=0.34mH 270 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 40 A Symbol Condition @ 200A, Pulse, TJ = 25 °C @ 400A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 125 °C @ 400A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 35 40 45 200 400 Max. 401CMQ035 401CMQ040 401CMQ045 per leg per device Units V A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Insulation Voltage * IR1 IR2 CT LS dv/dt VRMS Max. 0.67 0.78 0.56 0.68 20 180 Units V V mA mA 10300 pF 5.0 nH 10,000 1000 V/μs V Specification -55 to +175 -55 to +175 Units °C °C Pulse Width < 300µs, Duty Cycle