WSR10N65F

WSR10N65F N-Ch MOSFET General Description Product Summery The WSR10N65F is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 650V 0.8Ω 10A Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). z Uninterruptible Power Supply(UPS) Features z Adapter. z Advanced high cell density Trench technology TO-220F Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±30 V 1.5 10 A 1.5 6 A 40 A 900 mJ 39 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1.2.5 Pulsed Drain Current 1 Single Pulse Avalanche Energy 1,5 PD Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.2 ℃/W www.winsok.tw Page 1 Rev 1: May.2019 WSR10N65F N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Typ. Max. Unit 650 --- --- V --- V/℃ 0.6 0.8 Ω 2.0 3.0 4.0 V --- -4.57 --- mV/℃ VDS=650V , VGS=0V , TJ=25℃ --- --- 1 VDS=520V , VGS=0V , TJ=55℃ --- --- 10 VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. Reference to 25℃ , ID=250uA 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V , ID=3.5A VGS=VDS , ID =250uA ----- 0.6 △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=40V , ID=3.5A --- 5 --- S Qg Total Gate Charge (10V) --- 21 --- Qgs Gate-Source Charge --- 7.5 --- Qgd Td(on) VDD=520V , VGS=10V , ID=10A Gate-Drain Charge --- 6 --- Turn-On Delay Time --- 28 --- uA nC Rise Time VDD=300V , VGS=10V , --- 70 --- Turn-Off Delay Time ID=10A,RG=25Ω . --- 53 --- Fall Time --- 35 --- Ciss Input Capacitance --- 1120 --- Coss Output Capacitance --- 130 --- Crss Reverse Transfer Capacitance --- 4.9 --- Min. Typ. Max. Unit --- --- 10 A --- --- 40 A --- --- 1.4 V --- 491 --- nS --- 2296 --- nC Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,2,5 1,2 Pulsed Source Current 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=10A , TJ=25℃ IF=10A , dI/dt=40A/µs , TJ=25℃ Notes: Note Note Note Note Note 1：limited by maximum junction temperature. 2：Bond wire current limit. 3：VDS=520V, ID=10A. 4：ID=0.5A, VDD=50V, Tj=25°C. 5：Repetitive Rating : Pulse width limited by maximum junction temperature. www.winsok.tw Page 2 Rev 1: May.2019 WSR10N65F N-Ch MOSFET Typical Characteristics Figure 1 Output Characteristics Figure 3 Rdson-ID Characteristics Figure 4 Body diode Characteristics Figure 2 Transfer Characteristics www.winsok.tw Page 3 Rev 1: May.2019 WSR10N65F N-Ch MOSFET Typical Characteristics Figure 5 Rdson- Tj Relation Figure 7 Capacitance vs Vds www.winsok.tw Figure 6 BVDSS vs Junction Temperature Figure 8 VGS vs QG Characteristics Page 4 Rev 1: May.2019 WSR10N65F N-Ch MOSFET Typical Characteristics Figure 9 Safe Operation Area Figure 10 Maximum current attenuation Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.