5P40

5P40 GOFORD P-Channel Enhancement Mode Power MOSFET Description The 5P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) Schematic diagram -40V -5A < 85mΩ < 150mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Marking and pin assignment Application ⚫ Power switch ⚫ DC/DC converters SOT-23-3L Device Package Marking Packaging 5P40 SOT-23-3 5P40 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -40 V ID -5 A IDM -20 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 62.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1397） 5P40 GOFORD Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.7 -3 V VGS = -10V, ID = - 3A -- 57 85 Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = - 2A -- 77 150 -- 600 -- -- 90 -- -- 70 -- -- 14 -- -- 3 -- mΩ Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = -20V, f = 1.0MHz VDD = -20V, ID = -3A, VGS = -10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 3.8 -- Turn-on Delay Time td(on) -- 9 -- Turn-on Rise Time tr -- 8 -- Turn-off Delay Time td(off) -- 28 -- -- 10 -- Turn-off Fall Time VDD = -20V, ID = -3A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -5 A Body Diode Voltage VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 4 -- nc Reverse Recovery Time trr -- 10 -- ns IS = -3A, VGS = 0V di/dt=500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1397） 5P40 GOFORD Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1397） 5P40 GOFORD Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics - ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) RDS(on),On-Resistance（mΩ） -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） Figure 3. Gate Charge Qg Gate Charge（nC） Figure 4. Drain Source On Resistance VGS=-4.5V VGS=-10V -ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) Is- Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 Vsd Source-Drain Voltage (V) FAX:0755-29961466 （A1397） 5P40 GOFORD Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1397） 5P40 GOFORD SOT-23-3L Package Information Dimensions in Millimeters Symbol MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1397）