MBRB30120CTTR

SANGDEST MICROELECTRONICS MBRB30120CT Technical Data Data Sheet N1102, Rev. - Green Products MBRB30120CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 175°C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 15.6 2.70 1.40 2.20 0.25BSC 5° 4° 4° 8° OPTION 1(HD) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1102, Rev. - MBRB30120CT Green Products OPTION 2(CJ) D²PAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRB30120CT Technical Data Data Sheet N1102, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 30 120 CT SSG YY WW L = Device Type = Package type = Forward Current (30A) = Reverse Voltage (120V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package D²PAK (Pb-Free) MBRB30120CT Shipping 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Forward Current(per device) Peak One Cycle NonRepetitive Surge Current (per leg) Symbol Condition Max. Units VRWM - 120 V 30 A 200 A IO IFSM 50% duty cycle @TC = 116°C, rectangular wave form 8.3 ms, half Sine pulse • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRB30120CT Technical Data Data Sheet N1102, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current(per leg) * Symbol Max. Units 0.90 V 1.0 mA Reverse Current(per leg) * IR2 15.0 mA 400 pF - 10,000 V/μs Symbol Condition Specification Units Junction Temperature TJ - -55 to +175 °C Storage Temperature Tstg - -55 to +175 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC 2.0 °C/W 1.85 g Junction Capacitance (per leg) Voltage Rate of Change * VF1 IR1 CT Condition @ 15 A, Pulse, TJ = 25 °C @VR = rated VR TC = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz dv/dt Pulse Width < 300µs, Duty Cycle