DSP8-12AS
Standard Rectifier
VRRM
= 2x 1200 V
I FAV
=
8A
VF
=
1.08 V
Phase leg
Part number
DSP8-12AS
Marking on Product: DSP8-12AS
Backside: anode/cathode
1
2/4
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak)
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220c
DSP8-12AS
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
max. Unit
1300
V
1200
V
TVJ = 25°C
10
µA
VR = 1200 V
TVJ = 150°C
0.2
mA
TVJ = 25°C
1.16
V
1.35
V
1.08
V
IF =
8A
IF =
16 A
IF =
8A
IF =
16 A
TVJ = 150 °C
TC = 160 °C
1.34
V
T VJ = 175 °C
8
A
TVJ = 175 °C
0.79
V
30
mΩ
d = 0.5
for power loss calculation only
R thCH
typ.
VR = 1200 V
rectangular
Ptot
min.
1.5 K/W
K/W
0.25
TC = 25°C
100
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
120
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
130
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
100
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
110
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
72
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
70
A²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
50
A²s
50
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
4
pF
20190220c
DSP8-12AS
Package
Ratings
TO-263 (D2Pak)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
25
Unit
A
-55
175
°C
-55
150
°C
150
°C
1.5
Weight
FC
20
mounting force with clip
g
60
N
Product Marking
XXXXXXXXX
Part Number
IXYS yywwZ
Logo
Date Code
Location
123456
Lot#
Ordering
Standard
Alternative
Ordering Number
DSP8-12AS-TRL
DSP8-12AS-TUB
Similar Part
DSP8-12S
DSP8-12A
DSP8-12AC
DSP8-08AS
Package
TO-263AB (D2Pak) (2)
TO-220AB (3)
ISOPLUS220AB (3)
TO-263AA (D2Pak) (3)
DSP8-08S
DSP8-08A
TO-263AB (D2Pak) (2)
TO-220AB (3)
Equivalent Circuits for Simulation
I
V0
R0
* on die level
Delivery Mode
Tape & Reel
Tube
Quantity
800
50
Code No.
502381
465453
Voltage class
1200
1200
1200
800
800
800
T VJ = 175°C
Rectifier
V 0 max
threshold voltage
0.79
R0 max
slope resistance *
30
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Marking on Product
DSP8-12AS
DSP8-12AS
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220c
DSP8-12AS
Outlines TO-263 (D2Pak)
Dim.
Supplier
Option
A1
H
D
E
A
c2
D1
L1
W
4
3
L
1 2
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
c
2x e
3x b2
3x b
W
E1
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
2/4
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220c
DSP8-12AS
Rectifier
20
100
102
50 Hz, 80% VRRM
VR = 0 V
16
80
12
IF
TVJ = 150°C
125°C
8
25°C
[A]
TVJ = 45°C
IFSM
TVJ = 45°C
2
It
[A]
2
TVJ = 150°C
[A s]
60
TVJ = 150°C
4
0
0.6
0.8
1.0
1.2
1.4
40
0.001
1.6
101
0.01
0.1
1
VF [V]
t [s]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
1
2
3
4 5 6 7 8 10
t [ms]
2
Fig. 3 I t versus time per diode
28
RthJA:
4 K/W
8 K/W
10 K/W
12 K/W
16 K/W
20 K/W
16
DC =
1
0.5
0.4
0.33
0.17
0.08
12
Ptot
8
DC =
1
0.5
0.4
0.33
0.17
0.08
24
20
IF(AV)M
16
[A]
12
[W]
8
4
4
0
0
0
2
4
6
8
10
12
0
25
50
75 100 125 150 175 200
0
50
Tamb [°C]
IF(AV)M [A]
100
150
200
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
1.6
1.2
Constants for ZthJC calculation:
ZthJC
i
0.8
[K/W]
0.4
Rthi (K/W)
ti (s)
1 0.155
0.0005
2 0.332
0.0095
3 0.713
0.17
4 0.3
5 0.00001
0.8
0.00001
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220c
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