DSP8-12S-TUB

DSP8-12S Standard Rectifier VRRM = 2x 1200 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-12S Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSP8-12S Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1300 V 1200 V TVJ = 25°C 10 µA VR = 1200 V TVJ = 150°C 0.2 mA TVJ = 25°C 1.16 V 1.35 V 1.08 V IF = 8A IF = 16 A IF = 8A IF = 16 A TVJ = 150 °C TC = 160 °C 1.34 V T VJ = 175 °C 8 A TVJ = 175 °C 0.79 V 33 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1200 V rectangular Ptot min. 1.5 K/W K/W 0.25 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20190220c DSP8-12S Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 25 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSP8-12S-TRL DSP8-12S-TUB Similar Part DSP8-12AS DSP8-12A DSP8-12AC DSP8-08S Package TO-263AA (D2Pak) (3) TO-220AB (3) ISOPLUS220AB (3) TO-263AB (D2Pak) (2) DSP8-08AS DSP8-08A TO-263AA (D2Pak) (3) TO-220AB (3) Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 499390 499382 Voltage class 1200 1200 1200 800 800 800 T VJ = 175°C Rectifier V 0 max threshold voltage 0.79 R0 max slope resistance * 30 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DSP8-12S-TRL DSP8-12S V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSP8-12S Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSP8-12S Rectifier 20 100 102 50 Hz, 80% VRRM VR = 0 V 16 80 12 IF TVJ = 150°C 125°C 8 25°C [A] TVJ = 45°C IFSM TVJ = 45°C 2 It [A] 2 TVJ = 150°C [A s] 60 TVJ = 150°C 4 0 0.6 0.8 1.0 1.2 1.4 40 0.001 1.6 101 0.01 0.1 1 VF [V] t [s] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current 1 2 3 4 5 6 7 8 10 t [ms] 2 Fig. 3 I t versus time per diode 28 RthJA: 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W 16 DC = 1 0.5 0.4 0.33 0.17 0.08 12 Ptot 8 DC = 1 0.5 0.4 0.33 0.17 0.08 24 20 IF(AV)M 16 [A] 12 [W] 8 4 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC i 0.8 [K/W] 0.4 Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 5 0.00001 0.8 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c