DSSK28-01AS-TUBE

DSSK28-01AS Schottky Diode VRRM = 100 V I FAV = 2x VF = 15 A 0.64 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK28-01AS Marking on Product: DSSK28-01AS Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK28-01AS Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 100 V TVJ = 25°C 500 µA TVJ = 125°C 5 mA IF = 15 A TVJ = 25°C 0.82 V IF = 30 A 0.95 V IF = 15 A 0.64 V IF = 30 A TVJ = 125 °C TC = 160 °C 0.78 V T VJ = 175 °C 15 A TVJ = 175 °C 0.43 V 8.6 mΩ d = 0.5 for power loss calculation only 1.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 100 V VR = 100 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 12 V f = 1 MHz 105 230 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190222b DSSK28-01AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSSK28-01AS-TRL DSSK28-01AS-TUB Similar Part DSSK30-01A DSA30C100PB DSA30C100PN DSA30C100HB Package TO-247AD (3) TO-220AB (3) TO-220ABFP (3) TO-247AD (3) DSA30C100QB DSA60C100PB DSA50C100HB TO-3P (3) TO-220AB (3) TO-247AD (3) Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK28-01AS DSSK28-01AS * on die level Delivery Mode Tape & Reel Tube Code No. 494119 492280 Voltage class 100 100 100 100 100 100 100 T VJ = 175°C Schottky V 0 max threshold voltage 0.43 V R0 max slope resistance * 5.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK28-01AS Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) E1 W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK28-01AS Schottky 30 100 1000 10 TVJ=175°C 1 150°C 10 IR IF CT 125°C 0.1 100°C [mA] [A] TVJ = 175°C 150°C 125°C 25°C 1 0.2 0.01 50°C 0.001 25°C 100 0.0001 0.4 0.6 0.8 TVJ = 25°C [pF] 75°C 1.0 80 0 20 40 60 80 100 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 20 40 60 80 100 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 25 40 20 DC 30 d = 0.5 IF(AV) P(AV) 15 d= DC 0.5 0.33 0.25 0.17 0.08 20 [A] [W] 10 10 5 0 0 0 50 100 150 0 200 TC [°C] 5 10 15 20 25 30 35 IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 2 1 D = 0.5 0.33 0.25 ZthJC 0.17 0.08 0.1 [K/W] Single Pulse 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b