DSEC16-12AS-TUB

DSEC16-12AS HiPerFRED VRRM = 1200 V I FAV = 2x t rr = 8A 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC16-12AS Marking on Product: DSEC16-12AS Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190218e DSEC16-12AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V 1200 V VR = 1200 V TVJ = 25°C 60 µA VR = 1200 V TVJ = 150°C 0.25 mA IF = 10 A TVJ = 25°C 2.94 V IF = 20 A 3.57 V IF = 10 A 1.96 V IF = 20 A TVJ = 150 °C TC = 135 °C rectangular 2.56 V T VJ = 175 °C 8 A TVJ = 175 °C 1.20 V 57 mΩ d = 0.5 for power loss calculation only 2.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 3 pF TVJ = 25 °C 4 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 10 A; VR = 600 V -di F /dt = 200 A/µs 60 40 W A TVJ = 100 °C 8 A TVJ = 25 °C 40 ns TVJ = 100 °C 115 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20190218e DSEC16-12AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSEC16-12AS-TRL DSEC16-12AS-TUB Similar Part DSEC16-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEC16-12AS DSEC16-12AS Package TO-220AB (3) * on die level Delivery Mode Tape & Reel Tube Code No. 507922 507915 Voltage class 1200 T VJ = 175°C Fast Diode V 0 max threshold voltage 1.2 V R0 max slope resistance * 54 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190218e DSEC16-12AS Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190218e DSEC16-12AS Fast Diode 30 2000 40 25 IF TVJ = 100°C VR = 600 V VR = 600 V 1500 TVJ = 25°C 100°C 150°C 20 TVJ = 100°C 30 IF = 10 A IF = 5 A 20 IF = 5 A [µC] [A] IRM IF = 10 A 1000 15 IF = 20 A IF = 20 A Qr [A] 10 500 10 5 0 0 1 2 3 0 100 4 0 1000 0 200 -diF /dt [A/µs] VF [V] 2.0 150 TVJ = 100°C VR = 600 V IF = 10 A VR = 600 V 130 80 trr IF = 10 A [ns] Qr 100 0.8 VFR [V] IF = 20 A 120 110 1000 1.2 TVJ = 100°C 1.5 IRM 800 120 140 Kf 1.0 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 1 Forward current IF versus VF 400 -diF /dt [A/µs] IF = 5 A tfr [µs] 40 0.4 0.5 tfr VFR 0.0 90 0 40 80 120 160 0 0 200 TVJ [°C] 400 600 800 1000 0 200 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 10 1 Constants for ZthJC calculation: ZthJC 0.1 i Rthi (K/W) [K/W] 1 0.0200 0.0002 2 0.3000 0.0040 3 0.8000 0.0200 4 1.3800 0.0100 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 ti (s) 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190218e