FST120150

FST120150 thru FST120200 Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 120 A Features • High Surge Capability • Types from 150 V to 200V VRRM TO-249AB Package • Isolated to Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified FST120150 FST120200 Unit VRRM 150 200 V VRMS 106 141 V 150 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions FST120150 FST120200 Unit Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 1000 1000 A VF IFM = 60 A, Tj = 25 °C 0.88 0.92 V IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 mA 0.80 0.80 °C/W Parameter Maximum instantaneous forward voltage (per leg) Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction case (per leg) Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/fst120150.pdf 1 FST120150 thru FST120200 Oct. 2018 http://www.diodemodule.com/silicon_products/modules/fst120150.pdf 2 FST120150 thru FST120200 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. N A P G E C J 1 2 3 B L F K H M R Q D Inches Oct. 2018 Millimeters Min Max Min Max A 1.995 2.005 50.67 50.93 B 0.300 0.325 7.62 8.26 C 0.495 0.505 12.57 12.83 D 0.182 0.192 4.62 4.88 E 0.990 1.010 25.15 26.65 F 2.390 2.410 60.71 61.21 G 1.495 1.525 37.90 38.70 H 0.114 0.122 2.90 3.10 J ----- 0.420 ----- 10.67 K 0.256 0.275 6.5 7.0 L 0.490 0.510 12.45 12.95 M 0.330 0.350 8.38 8.90 N 0.175 0.195 4.45 4.95 P 0.035 0.045 0.89 1.14 R 0.445 0.455 11.30 11.56 Q 0.890 0.910 22.61 23.11 http://www.diodemodule.com/silicon_products/modules/fst120150.pdf 3