200CNQ045

200CNQ045

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    PRM4

  • 描述:

  • 数据手册
  • 价格&库存
200CNQ045 数据手册
SANGDEST MICROELECTRONICS Technical Data Data Sheet N1185, Rev. B 200CNQ SERIES Green Products 200CNQ035/200CNQ040/200CNQ045 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 150 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN st nd Marking for 200CNQ035/040/045, 1 row SS YYWWL, 2 row 200CNQ035/040/045 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 200CNQ SERIES Technical Data Data Sheet N1185, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =114°C, rectangular wave form IFSM 8.3 ms, half Sine pulse 1860 A EAS TJ=25℃,IAS=20A,L=0.67mH 135 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 20 A Symbol Condition @ 100A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 25 °C @ 100A, Pulse, TJ = 125 °C @ 200A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 35 40 45 100 200 Max. 200CNQ035 200CNQ040 200CNQ045 per leg per device Units V A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * IR1 IR2 CT LS dv/dt Max. 0.57 0.72 0.49 0.64 10 500 Units V V mA mA 5200 pF 7.0 nH 10,000 V/μs Specification -55 to +150 -55 to +150 Units °C °C Pulse Width < 300µs, Duty Cycle
200CNQ045 价格&库存

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