203CNQ100

203CNQ100

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    PRM4

  • 描述:

  • 数据手册
  • 价格&库存
203CNQ100 数据手册
SANGDEST MICROELECTRONICS Technical Data Data Sheet N1189, Rev. B 203CNQ SERIES Green Products 203CNQ080/203CNQ100 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN st nd Marking for 203CNQ080/100, 1 row SS YYWWL, 2 row 203CNQ080/100 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 203CNQ SERIES Technical Data Data Sheet N1189, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =110°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS 80 100 100 200 Max. 203CNQ080 203CNQ100 per leg per device Units V A 2520 A TJ=25℃,IAS=1A,L=30mH 15 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 1 A Symbol Condition @ 100A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 25 °C @ 100A, Pulse, TJ = 125 °C @ 200A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Insulation Volage * IR1 IR2 CT LS dv/dt VRMS Max. 0.86 1.03 0.70 0.84 3 40 Units V V mA mA 2650 Pf 7.0 Nh 10,000 1000 V/μs V Specification -55 to +175 -55 to +175 Units °C °C Pulse Width < 300µs, Duty Cycle
203CNQ100 价格&库存

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