203CMQ100

SANGDEST MICROELECTRONICS 203CMQ SERIES Technical Data Data Sheet N0989, Rev. D 203CMQ080/100 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Product contain Pb All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches PRM4 (Isolated) MARKING,MOLDING RESIN st nd Marking for 203CMQ080/100, 1 row SS YYWWL, 2 row 203CMQ080/100 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 203CMQ SERIES Technical Data Data Sheet N0989, Rev. D Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(peg leg) Repetitive Avalanche Current(peg leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =110°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS IAR 80 100 100 200 Max. 203CMQ080 203CMQ100 per leg per device Units V A 2520 A TJ=25℃,IAS=1A,L=30mH 15 mJ Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5×VR typical 1 A Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Symbol VF1 VF2 Reverse Current (per leg) * Junction Capacitance (per leg) Typical Series Inductance (per leg) Voltage Rate of Change Insulation Voltage * IR1 IR2 CT LS dv/dt VRMS Condition @ 100A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 25 °C @ 100A, Pulse, TJ = 125 °C @ 200A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.86 1.03 0.70 0.84 3 40 Units 2650 pF 7.0 nH 10,000 1000 V/μs V Specification -55 to +175 -55 to +175 Units °C °C V V mA mA Pulse Width < 300µs, Duty Cycle