209CMQ135

SANGDEST MICROELECTRONICS Technical Data Data Sheet N1009, Rev. C 209CMQ SERIES Green Products 209CMQ135/209CMQ150 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches PRM4 (Isolated) MARKING,MOLDING RESIN st nd Marking for 209CMQ135/150, 1 row SS YYWWL, 2 row 209CMQ135/150 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 209CMQ SERIES Technical Data Data Sheet N1009, Rev. C Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol Condition VRWM - IF(AV) 50% duty cycle @TC =110°C, rectangular wave form IFSM 8.3 ms, half Sine pulse Max. 135(209CMQ135) 150(209CMQ150) per leg 100 200 per device 1440 Units V A A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Symbol VF1 VF2 Max. Reverse Current at DC condition Max. Reverse Current Max. Junction Capacitance Max. Voltage Rate of Change(Rated VR) * IR1 IR2 CT dv/dt Condition @ 100A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 25 °C @ 100A, Pulse, TJ = 125 °C @ 200A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz - Max. 1.03 1.22 0.71 0.82 Units V V 3 mA 45 mA 3000 pF 10,000 V/μs Pulse Width < 300µs, Duty Cycle