MSRTA400120(A)

MSRTA400120(A) thru MSRTA400160(A) Silicon Standard Recovery Diode VRRM = 600 V - 1600 V IF = 400 A Features • High Surge Capability • Types up to 1600 V VRRM nt s. co m Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified VRRM RMS reverse voltage VRMS DC blocking voltage VDC MSRTA400120(A) MSRTA400140(A) MSRTA400160(A) Unit 1200 848 1400 1600 V 990 1131 V 1200 1400 1600 V ne Repetitive p p peak reverse voltage g Conditions po Symbol IF TC ≤ 125 °C 400 400 400 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 4150 4150 4150 A Operating temperature Storage temperature Tj Tstg -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 °C °C lin e co Continuous forward current m Parameter Electrical characteristics, at Tj = 25 °C, unless otherwise specified Diode forward voltage Reverse current Symbol on Parameter VF IR Conditions MSRTA400120(A) MSRTA400140(A) MSRTA400160(A) Unit IF = 400 A, Tj = 25 °C VR = 600 V, Tj = 25 °C VR = 600 V, Tj = 150 °C 1.2 25 10 1.2 25 10 1.2 25 10 V μA mA 0.14 0.14 0.14 °C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 on lin e co m po ne nt s. co m MSRTA400120(A) thru MSRTA400160(A) www.genesicsemi.com 2