306CNQ200

SANGDEST MICROELECTRONICS Technical Data Data Sheet N1217, Rev. B 306CNQ200 Green Products 306CNQ200 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN st nd Marking for 306CNQ200, 1 row SS YYWWL, 2 row 306CNQ200 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 306CNQ200 Technical Data Data Sheet N1217, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =121°C, rectangular wave form 8.3 ms, half Sine pulse 150 300 Max. 200 per leg per device 3840 Units V A A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Symbol VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Insulation Voltage * IR1 IR2 CT LS dv/dt VRMS Condition @ 150A, Pulse, TJ = 25 °C @ 300A, Pulse, TJ = 25 °C @ 150A, Pulse, TJ = 125 °C @ 300A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.86 1.03 0.76 0.86 10 90 Units V V mA mA 3500 pF 7.0 nH 10,000 1000 V/μs V Specification -55 to +175 -55 to +175 Units °C °C Pulse Width < 300µs, Duty Cycle