309CNQ135

SANGDEST MICROELECTRONICS Technical Data Data Sheet N1219, Rev. B 309CNQ… SERIES Green Products 309CNQ135/309CNQ150 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN st nd Marking for 309CNQ135/150, 1 row SS YYWWL, 2 row 309CNQ135/150 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 309CNQ… SERIES Technical Data Data Sheet N1219, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =110°C, rectangular wave form IFSM 8.3 ms, half Sine pulse 135 150 150 300 Max. 309CNQ135 309CNQ150 per leg per device 1440 Units V A A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Symbol VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * IR1 IR2 CT LS dv/dt Condition @ 150A, Pulse, TJ = 25 °C @ 300A, Pulse, TJ = 25 °C @ 150A, Pulse, TJ = 125 °C @ 300A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 1.03 1.22 0.71 0.82 3 45 Units V V mA mA 4000 pF 7.0 nH 10,000 V/μs Specification -55 to +175 -55 to +175 Units °C °C Pulse Width < 300µs, Duty Cycle