MDD250-16N1

MDD 250 High Power Diode Modules VRSM V 1300 1500 1700 VRRM V 1200 1400 1600 IFRSM = 2x 450 A IFAVM = 2x 290 A VRRM = 1200-1600 V 3 Type 1 2 MDD 250-12N1 MDD 250-14N1 MDD 250-16N1 E72873 Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine 450 290 A A IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 11 11,7 kA kA • Direct copper bonded Al2O3 ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9 9,6 kA kA Applications TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 605 560 kA s kA2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 405 380 kA2s kA2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2.5 - 5 12 - 15 Nm Nm 320 g It 2 Maximum Ratings Features Symbol TVJ TVJM Tstg 2 VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws Symbol Conditions IRRM VR = VRRM; TVJ = TVJM 40 mA VF IF = 600 A; TVJ = 25°C 1.3 V VT0 rt For power-loss calculations only TVJ = TVJM 0.75 0.75 V mW RthJC per diode; DC current per module per diode; DC current per module 0.129 0.065 0.169 0.0845 K/W K/W K/W K/W RthJK • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Characteristics Values other values see Fig. 6/7 QS IRM TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs 760 275 µC A dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150910a 1-4 MDD 250 Dimensions in mm (1 mm = 0.0394“) 42.5 28.5 0.25 32 hex SW13 4.5 M8x16 35 65 x 57 116 6 5.5 38 60 80 4567 max. 12.4 Threaded spacer for higher Anode / Cathode construction: Type ZY 250 (material brass) IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150910a 2-4 MDD 250 15000 106 600 VR = 0 V 50 Hz, 80%VRRM DC 180° sin. 120° rect. 60° rect. 30° rect. 500 10000 400 TVJ = 45°C IFAVM I2dt IFSM TVJ = 45°C [s] 300 [A2s] [A] TVJ = 150°C 5000 200 TVJ = 150°C 100 0 10-3 10-2 10-1 100 105 101 1 4 2 6 8 10 t [s] t [s] Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 I2dt versus time (1-10 ms) 0 0 50 100 150 200 TC [°C] Fig. 2a Maximum forward current at case temperature 500 RthJA [K/W] 0.3 0.4 400 0.5 PT 0.6 300 0.8 [W] 1.0 200 1.4 DC 180° sin. 120° rect. 60° rect. 30° rect. 100 0 0 100 200 1.8 300 0 50 100 150 200 TA [°C] TFAVM [A] Fig. 3 Power dissipation vs. forward current and ambient temperature (per diode) 2000 RthJA [K/W] 0.06 0.08 1500 R 0.10 L 0.15 PT 0.20 1000 0.30 [W] 0.40 Circuit B2 2x MDD250 500 0.50 R = resistive load L = inductive load 0 0 200 400 TDAVM [A] 600 0 50 100 150 200 TA [°C] Fig. 4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150910a 3-4 MDD 250 2500 RthJA [K/W] 0.03 2000 0.05 Ptot 0.06 0.08 1500 0.12 [W] 0.15 1000 0.20 0 0.30 Circuit B6 3x MDD250 500 0 200 400 0 600 50 100 TDAVM [A] 150 200 TA [°C] Fig. 5 Three phase rectifier bridge: Power dissipation versus direct  output current and ambient temperature 0.14 RthJC for various conduction angles d: 30° d DC 180° 120° 60° 30° DC 0.12 0.10 ZthJC 0.08 [K/W] RthJC [K/W] 0.129 0.131 0.132 0.132 0.133 0.06 Constants for ZthJC calculation: 0.04 0.02 0.00 10-3 10-2 10-1 100 101 i Rthi [K/W] t i [s] 1 0.0035 0.0099 2 0.0165 0.168 3 01091 0.456 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) 0.20 RthJK for various conduction angles d: d DC 180° 120° 60° 30° 30° 0.16 DC ZthJK 0.12 [K/W] 0.08 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.04 0.00 10-3 10-2 10-1 100 101 i Rthi (K/W) t i (s) 1 0.0035 0.0099 2 0.0165 0.168 3 0.1091 0.456 4 0.04 1.36 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150910a 4-4