MDD 250
High Power
Diode Modules
VRSM
V
1300
1500
1700
VRRM
V
1200
1400
1600
IFRSM =
2x 450 A
IFAVM =
2x 290 A
VRRM = 1200-1600 V
3
Type
1
2
MDD 250-12N1
MDD 250-14N1
MDD 250-16N1
E72873
Conditions
IFRMS
IFAVM
TVJ = TVJM
TC = 100°C; 180° sine
450
290
A
A
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
11
11,7
kA
kA
• Direct copper bonded Al2O3 ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9
9,6
kA
kA
Applications
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
605
560
kA s
kA2s
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
405
380
kA2s
kA2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
2.5 - 5
12 - 15
Nm
Nm
320
g
It
2
Maximum Ratings
Features
Symbol
TVJ
TVJM
Tstg
2
VISOL
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M8)
Weight
Typical including screws
Symbol
Conditions
IRRM
VR = VRRM;
TVJ = TVJM
40
mA
VF
IF = 600 A;
TVJ = 25°C
1.3
V
VT0
rt
For power-loss calculations only
TVJ = TVJM
0.75
0.75
V
mW
RthJC
per diode; DC current
per module
per diode; DC current
per module
0.129
0.065
0.169
0.0845
K/W
K/W
K/W
K/W
RthJK
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Characteristics Values
other values
see Fig. 6/7
QS
IRM
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs
760
275
µC
A
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2015 IXYS All rights reserved
20150910a
1-4
MDD 250
Dimensions in mm (1 mm = 0.0394“)
42.5
28.5
0.25
32
hex
SW13
4.5
M8x16
35
65 x 57
116
6
5.5
38
60
80
4567
max. 12.4
Threaded spacer for higher Anode /
Cathode construction:
Type ZY 250 (material brass)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2015 IXYS All rights reserved
20150910a
2-4
MDD 250
15000
106
600
VR = 0 V
50 Hz, 80%VRRM
DC
180° sin.
120° rect.
60° rect.
30° rect.
500
10000
400
TVJ = 45°C
IFAVM
I2dt
IFSM
TVJ = 45°C
[s]
300
[A2s]
[A]
TVJ = 150°C
5000
200
TVJ = 150°C
100
0
10-3
10-2
10-1
100
105
101
1
4
2
6
8 10
t [s]
t [s]
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2dt versus time (1-10 ms)
0
0
50
100
150
200
TC [°C]
Fig. 2a Maximum forward current
at case temperature
500
RthJA
[K/W]
0.3
0.4
400
0.5
PT
0.6
300
0.8
[W]
1.0
200
1.4
DC
180° sin.
120° rect.
60° rect.
30° rect.
100
0
0
100
200
1.8
300
0
50
100
150
200
TA [°C]
TFAVM [A]
Fig. 3 Power dissipation vs. forward current and ambient temperature (per diode)
2000
RthJA
[K/W]
0.06
0.08
1500
R
0.10
L
0.15
PT
0.20
1000
0.30
[W]
0.40
Circuit
B2
2x MDD250
500
0.50
R = resistive load
L = inductive load
0
0
200
400
TDAVM [A]
600
0
50
100
150
200
TA [°C]
Fig. 4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient
IXYS reserves the right to change limits, test conditions and dimensions.
© 2015 IXYS All rights reserved
20150910a
3-4
MDD 250
2500
RthJA
[K/W]
0.03
2000
0.05
Ptot
0.06
0.08
1500
0.12
[W]
0.15
1000
0.20
0
0.30
Circuit
B6
3x MDD250
500
0
200
400
0
600
50
100
TDAVM [A]
150
200
TA [°C]
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
0.14
RthJC for various conduction angles d:
30°
d
DC
180°
120°
60°
30°
DC
0.12
0.10
ZthJC
0.08
[K/W]
RthJC [K/W]
0.129
0.131
0.132
0.132
0.133
0.06
Constants for ZthJC calculation:
0.04
0.02
0.00
10-3
10-2
10-1
100
101
i Rthi [K/W]
t i [s]
1 0.0035
0.0099
2 0.0165
0.168
3 01091
0.456
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)
0.20
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
30°
0.16
DC
ZthJK
0.12
[K/W]
0.08
RthJK (K/W)
0.169
0.171
0.172
0.172
0.173
Constants for ZthJK calculation:
0.04
0.00
10-3
10-2
10-1
100
101
i Rthi (K/W) t i (s)
1 0.0035
0.0099
2 0.0165
0.168
3 0.1091
0.456
4 0.04
1.36
t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2015 IXYS All rights reserved
20150910a
4-4
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