FST16035L

FST16035L Low VF Silicon Power Schottky Diode VRRM = 35 V IF(AV) = 160 A Features • High Surge Capability TO-249AB Package • Isolated to Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Symbol Parameter Conditions FST16035L Unit Maximum recurrent peak reverse voltage VRRM 35 V Maximum RMS voltage VRMS 25 V Maximum M i DC bl blocking ki voltage lt Operating temperature Storage temperature VDC Tj Tstg 35 -55 to 150 -55 to 150 V °C °C Conditions FST16035L Unit Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Average forward current (per pkg) IF(AV) TC = 100 °C 160 A Peak forward surge current IFSM tp = 8.3 ms, half sine 1000 A Maximum instantaneous forward voltage (per leg) VF IFM = 80 A, Tj = 25 °C 0.60 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 1 Tj = 100 °C 150 (per leg) mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) www.genesicsemi.com/silicon-products/schottky-rectifiers/ RΘJC 0.50 1 °C/W FST16035L www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST16035L Package dimensions and terminal configuration Product is marked with part number and terminal configuration. N A P G E C J 1 L M R 2 Q 3 B F K H D Inches Millimeters Min Max Min Max A 1.995 2.005 50.67 50.93 B 0.300 0.325 7.62 8.26 C 0.495 0.505 12.57 12.83 D 0.182 0.192 4.62 4.88 E 0.990 1.010 25.15 26.65 F 2.390 2.410 60.71 61.21 G 1.495 1.525 37.90 38.70 H 0.114 0.122 2.90 3.10 J ----- 0.420 ----- 10.67 K 0.256 0.275 6.5 7.0 L 0.490 0.510 12.45 12.95 M 0.330 0.350 8.38 8.90 N 0.175 0.195 4.45 4.95 P 0.035 0.045 0.89 1.14 R 0.445 0.455 11.30 11.56 Q 0.890 0.910 22.61 23.11 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3