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GBL02

GBL02

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    DIODE BRIDGE 200V 4 A- GBL

  • 详情介绍
  • 数据手册
  • 价格&库存
GBL02 数据手册
GBL005 thru GBL04 Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 4 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • This series is UL listed under the Recognized • Glass passivated chip junction • High case dielectric strength • Typical IR less than 0,1 A • High surge current capability • Ideal for printed circuit boards GBL Package • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Weight: 0.071 oz, 2.0 g Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions GBL005 GBL01 GBL02 GBL04 Unit 50 100 200 400 V 280 V Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS 35 70 140 DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions GBL005 GBL01 GBL02 GBL04 Unit IO Tc = 50 °C (Note 1) Tc = 40 °C (Note 2) 4.0 3.0 4.0 3.0 4.0 3.0 4.0 3.0 A Peak forward surge current IFSM tp = 8.3 ms, half sine 135 135 135 135 A Maximum instantaneous forward voltage drop per leg VF IF = 4 A 1.1 1.1 1.1 1.1 V Maximum DC reverse current at rated DC blocking voltage per leg IR Ta = 25 °C 5 5 5 5 500 75 500 75 500 75 500 75 A sec 95 95 95 95 pF Parameter Maximum average forward rectified current Symbol 2 Rating for fusing It Typical junction capacitance per leg (Note 3) Cj Typical thermal resistance per leg 1 Ta = 125 °C t < 8.3 ms RΘJA (Note 1) 22 22 22 22 RΘJL (Note 2) 3.5 3.5 3.5 3.5 μA 2 °C/W - Unit mounted on 3.0" x 3.0" x 0.11" (75 mm x 75 mm x 3 mm) Al plate 2 - Unit mounted on P.C.B. At 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x 3 12- Measured mm) copper at pads 1.0 MHz and applied reverse bias of 4.0 V Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbl02.pdf 1 GBL005 thru GBL04 Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbl02.pdf 2 GBL005 thru GBL04 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. GBL Dimensions in millimeters Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbl02.pdf 3
GBL02
物料型号:GeneSiC SEMICONDUCTOR GBL005 至 GBL04 器件简介:单相玻璃钝化硅桥式整流器,适用于印刷电路板,具有高耐压、高浪涌电流能力等特性。 引脚分配:GBL封装,具体尺寸和端子配置在文档中有详细描述。 参数特性:包括重复峰值反向电压(VRRM)、有效值反向电压(VRMS)、直流阻断电压(VD)、工作温度(T)、存储温度(Tsto)等。 功能详解:电气特性在Tc = 25°C条件下,包括最大平均正向整流电流(IF)、峰值正向浪涌电流(IFSM)、每腿的最大瞬态正向电压降(VF)、额定直流阻断电压下每腿的最大直流反向电流(IR)等。 应用信息:适用于单相、半正弦波、60Hz、电阻性或感性负载,对于电容性负载需降低电流20%。 封装信息:产品标记有零件号和端子配置,具体尺寸和端子配置在文档中有详细描述。
GBL02 价格&库存

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