GBPC3504T

厂商：
GENESICSEMICONDUCTOR
封装：
GBPC-T
描述：
DIODE BRIDGE 400V 35A GBPC-T/W

数据手册：

下载GBPC3504T.pdf

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详情介绍
数据手册
价格&库存

GBPC3504T 数据手册

GBPC35005T/W thru GBPC3504T/W Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 35 A Features • Integrally molded heat sink provides low thermal resistance for maximum heat dissipation • High surge current capability • Universal 3-way terminals: snap on, wire-around, or P.C board mounting • High temperature soldering guaranteed: 260⁰C/ 10 seconds at 5 lbs (2.3 kg) tension • Not ESD Sensitive GBPC-T/W Package Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25". Faston lugs or copper leads 0.040" diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 15 grams or 0.53 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit 100 200 400 V 35 70 140 280 V 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C 50 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop per leg Maximum DC reverse current at rated DC blocking voltage per leg Rating for fusing RMS isolation voltage from case to leads Typical junction capacitance Typical thermal resistance Oct. 2018 Conditions GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit IO Tc = 50 °C 35.0 35.0 35.0 35.0 A IFSM single sine-wave 400 400 400 400 A VF IF = 17.5 A 1.1 1.1 1.1 1.1 V Ta = 25 °C 5 5 5 5 Ta = 125 °C 500 660 500 660 500 660 500 660 A sec VISO 2500 2500 2500 2500 V Cj 300 300 300 300 pF RΘJC 1.4 1.4 1.4 1.4 °C/W IR 2 It 1 ms < tm < 8.3 ms http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3504tw.pdf μA 2 1 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3504tw.pdf 2 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3504tw.pdf 3 GBPC35005T/W thru GBPC3504T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3504tw.pdf 4

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GBPC3504T

物料型号：GBPC35005T/W至GBPC3504T/W

器件简介： - 这些整流器是单相玻璃钝化硅桥式整流器，具有集成的散热片，提供低热阻以实现最大的散热效果。 - 它们具有高浪涌电流能力。 - 通用的三向端子：可进行卡扣安装、绕线安装或PCB板安装。 - 符合RoHS标准，不敏感于静电放电。

引脚分配： - 端子可以是镀镍的0.25英寸快速连接端子或直径为0.040英寸的铜线。 - 极性符号标记在本体上。

参数特性： - 重复峰值反向电压（VRRM）：50V至400V - 有效值反向电压（VRMS）：35V至280V - 直流阻断电压：50V至400V - 工作温度范围：-55至150摄氏度 - 存储温度范围：-55至150摄氏度

功能详解： - 这些整流器在60Hz、单相、半正弦波、电阻性或感性负载下具有电气特性。 - 对于电容性负载，电流需要降低20%。

应用信息： - 这些整流器适用于需要高浪涌电流能力和低热阻的应用。

封装信息： - 封装类型为GBPC-T/W，具有集成的散热片。 - 安装位置：使用硅胶热导电膏将桥式整流器螺栓固定在散热片上。 - 重量：15克或0.53盎司。 - 最大安装扭矩：20英寸磅。

GBPC3504T 价格&库存

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