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GBPC3502T

GBPC3502T

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    GBPC-T

  • 描述:

    DIODE BRIDGE 200V 35A GBPC-T/W

  • 数据手册
  • 价格&库存
GBPC3502T 数据手册
GBPC35005T/W thru GBPC3504T/W Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 35 A Features • Integrally molded heat sink provides low thermal resistance for maximum heat dissipation • High surge current capability • Universal 3-way terminals: snap on, wire-around, or P.C board mounting • High temperature soldering guaranteed: 260⁰C/ 10 seconds at 5 lbs (2.3 kg) tension • Not ESD Sensitive GBPC-T/W Package Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25". Faston lugs or copper leads 0.040" diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 15 grams or 0.53 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit 100 200 400 V 35 70 140 280 V 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C 50 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop per leg Maximum DC reverse current at rated DC blocking voltage per leg Rating for fusing RMS isolation voltage from case to leads Typical junction capacitance Typical thermal resistance Oct. 2018 Conditions GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit IO Tc = 50 °C 35.0 35.0 35.0 35.0 A IFSM single sine-wave 400 400 400 400 A VF IF = 17.5 A 1.1 1.1 1.1 1.1 V Ta = 25 °C 5 5 5 5 Ta = 125 °C 500 660 500 660 500 660 500 660 A sec VISO 2500 2500 2500 2500 V Cj 300 300 300 300 pF RΘJC 1.4 1.4 1.4 1.4 °C/W IR 2 It 1 ms < tm < 8.3 ms http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3502tw.pdf μA 2 1 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3502tw.pdf 2 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3502tw.pdf 3 GBPC35005T/W thru GBPC3504T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc3502tw.pdf 4
GBPC3502T 价格&库存

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