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GBU8D

GBU8D

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    RECT BRIDGE GPP 8A 200V GBU

  • 数据手册
  • 价格&库存
GBU8D 数据手册
GBU8A thru GBU8G Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 8 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 VRMS • Glass passivated chip junction • Ideal for printed circuit boards • High surge overload rating • High temperature soldering guaranteed: 260⁰C/ 10 seconds, 0.375 (9.5mm) lead length GBU Package • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions GBU8A GBU8B GBU8D GBU8G Unit Repetitive peak reverse voltage VRRM 50 100 200 400 V RMS reverse voltage VRMS 35 70 140 280 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions GBU8A GBU8B GBU8D GBU8G Unit IO Tc = 100 °C 8.0 8.0 8.0 8.0 A IFSM tp = 8.3 ms, half sine 200 200 200 200 A Maximum instantaneous forward voltage drop per leg VF IF = 8 A 1.1 1.1 1.1 1.1 V Maximum DC reverse current at rated DC blocking voltage per leg IR Ta = 25 °C 5 5 5 5 Ta = 125 °C Rating for fusing I2 t 500 166 500 166 500 166 500 166 A2sec Typical junction capacitance per leg 3 Cj 211 211 211 211 pF RΘJA 21 21 21 21 RΘJL 2.2 2.2 2.2 2.2 Parameter Symbol Maximum average forward rectified current 1,2 Peak forward surge current Typical thermal resistance per leg 1 1,2 t < 8.3 ms μA °C/W - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using #6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8d.pdf 1 GBU8A thru GBU8G Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8d.pdf 2 GBU8A thru GBU8G Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8d.pdf 3
GBU8D 价格&库存

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