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GBU4J

GBU4J

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    Bridge Rectifier Single Phase 600V 4A Through Hole GBU

  • 数据手册
  • 价格&库存
GBU4J 数据手册
GBU4J thru GBU4M Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V -1000 V IO = 4 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 VRMS • Glass passivated chip junction • Ideal for printed circuit boards • High surge overload rating GBU Package • High temperature soldering guaranteed: 260⁰C/ 10 seconds, 0.375 (9.5mm) lead length • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions GBU4J GBU4K GBU4M Repetitive peak reverse voltage VRRM 600 800 1000 RMS reverse voltage VRMS 420 560 700 DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 Conditions GBU4J GBU4K GBU4M IO Tc = 100 °C 4.0 4.0 4.0 IFSM tp = 8.3 ms, half sine 150 150 150 Maximum instantaneous forward voltage drop per leg VF IF = 4 A 1.1 1.1 1.1 Maximum DC reverse current at rated DC blocking voltage per leg IR Ta = 25 °C 5 5 5 Ta = 125 °C 500 93 500 93 500 93 Cj 45 45 45 RΘJA RΘJL 22 4.2 22 4.2 4.2 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Symbol Maximum average forward rectified current 1,2 Peak forward surge current I2 t Rating for fusing Typical junction capacitance per leg 3 Typical thermal resistance per leg 1 1,2 t < 8.3 ms 22 - Device mounted on 40 mm x 40 mm x 1.5 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using #6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 1 GBU4J thru GBU4M VRRM = 600 V -1000 V GBU Package Unit V V V °C °C ified Unit A A V μA A2sec pF °C/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 2 GBU4J thru GBU4M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 3 GBU4J thru GBU4M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 4 GBU4J thru GBU4M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 5 GBU4J thru GBU4M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu4j.pdf 6
GBU4J 价格&库存

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