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GBU8K

GBU8K

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    Bridge Rectifier Single Phase 800V 8A Through Hole GBU

  • 数据手册
  • 价格&库存
GBU8K 数据手册
GBU8J thru GBU8M Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V -1000 V IO = 8 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 VRMS • Glass passivated chip junction • Ideal for printed circuit boards • High surge overload rating GBU Package • High temperature soldering guaranteed: 260⁰C/ 10 seconds, 0.375 (9.5mm) lead length • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions GBU8J GBU8K GBU8M Repetitive peak reverse voltage VRRM 600 800 1000 RMS reverse voltage VRMS 420 560 700 DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 Conditions GBU8J GBU8K GBU8M IO Tc = 100 °C 8.0 8.0 8.0 IFSM tp = 8.3 ms, half sine 200 200 200 Maximum instantaneous forward voltage drop per leg VF IF = 8 A 1.1 1.1 1.1 Maximum DC reverse current at rated DC blocking voltage per leg IR Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Symbol Maximum average forward rectified current 1,2 Peak forward surge current Rating for fusing Typical junction capacitance per leg 3 Typical thermal resistance per leg 1 1,2 Ta = 25 °C 5 5 5 Ta = 125 °C 500 166 500 166 500 166 Cj 94 94 94 RΘJA RΘJL 21 2.2 21 2.2 21 I2 t t < 8.3 ms 2.2 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using #6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 1 GBU8J thru GBU8M VRRM = 600 V -1000 V GBU Package Unit V V V °C °C ified Unit A A V μA A2sec pF °C/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 2 GBU8J thru GBU8M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 3 GBU8J thru GBU8M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 4 GBU8J thru GBU8M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 5 GBU8J thru GBU8M Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbu8k.pdf 6
GBU8K 价格&库存

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