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GBPC1510T

GBPC1510T

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    GBPC

  • 描述:

    DIODE BRIDGE 1000V 15A GBPC-T

  • 数据手册
  • 价格&库存
GBPC1510T 数据手册
GBPC1506T/W thru GBPC1510T/W Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 15 A Features • Integrally molded heat sink provides low thermal resistance for maximum heat dissipation • High surge current capability • Void-free junction soldering by using vacuum soldering • Universal 3-way terminals: snap on, wire-around, or P.C board mounting • High temperature soldering guaranteed: 260⁰C/ 10 seconds at 5 lbs (2.3 kg) tension • Not ESD Sensitive GBPC-T/W Package Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25". Faston lugs or copper leads 0.040" diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 15 grams or 0.53 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Parameter Symbol Conditions GBPC1506T/W GBPC1508T/W GBPC1510T/W Unit 1000 V Repetitive peak reverse voltage VRRM 600 800 RMS reverse voltage VRMS 420 560 700 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop per leg Maximum DC reverse current at rated DC blocking voltage per leg Rating for fusing RMS isolation voltage from case to leads Typical junction capacitance Typical thermal resistance Oct. 2018 Conditions GBPC1506T/W GBPC1508T/W GBPC1510T/W Unit IO Tc = 55 °C 15.0 15.0 15.0 A IFSM single sine-wave 300 300 300 A VF IF = 7.5 A 1.1 1.1 1.1 V Ta = 25 °C 5 5 5 500 375 500 375 500 375 A sec VISO 2500 2500 2500 V Cj 300 300 300 pF RΘJC 1.9 1.9 1.9 °C/W Symbol IR 2 It Ta = 125 °C 1 ms < tm < 8.3 ms http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc1510tw.pdf μA 2 1 GBPC1506T/W thru GBPC1510T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc1510tw.pdf 2 GBPC1506T/W thru GBPC1510T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc1510tw.pdf 3 GBPC1506T/W thru GBPC1510T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc1510tw.pdf 4
GBPC1510T 价格&库存

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