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GBPC35005T

GBPC35005T

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    GBPC

  • 描述:

    DIODEBRIDGE50V35AGBPC-T/W

  • 详情介绍
  • 数据手册
  • 价格&库存
GBPC35005T 数据手册
GBPC35005T/W thru GBPC3504T/W Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 35 A Features • Integrally molded heat sink provides low thermal resistance for maximum heat dissipation • High surge current capability • Universal 3-way terminals: snap on, wire-around, or P.C board mounting • High temperature soldering guaranteed: 260⁰C/ 10 seconds at 5 lbs (2.3 kg) tension • Not ESD Sensitive GBPC-T/W Package Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25". Faston lugs or copper leads 0.040" diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 15 grams or 0.53 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit 100 200 400 V 35 70 140 280 V 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C 50 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop per leg Maximum DC reverse current at rated DC blocking voltage per leg Typical junction capacitance Typical thermal resistance Oct. 2018 GBPC35005T/W GBPC3501T/W GBPC3502T/W GBPC3504T/W Unit IO Tc = 50 °C 35.0 35.0 35.0 35.0 A IFSM single sine-wave 400 400 400 400 A VF IF = 17.5 A 1.1 1.1 1.1 1.1 V Ta = 25 °C 5 5 5 5 Ta = 125 °C 500 660 500 660 500 660 500 660 A sec VISO 2500 2500 2500 2500 V Cj 300 300 300 300 pF RΘJC 1.4 1.4 1.4 1.4 °C/W IR Rating for fusing RMS isolation voltage from case to leads Conditions 2 It 1 ms < tm < 8.3 ms http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc35005tw.pdf μA 2 1 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc35005tw.pdf 2 GBPC35005T/W thru GBPC3504T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc35005tw.pdf 3 GBPC35005T/W thru GBPC3504T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc35005tw.pdf 4
GBPC35005T
物料型号:GBPC35005T/W至GBPC3504T/W

器件简介:这是一种单相玻璃钝化硅桥式整流器,具有以下特点: - 集成成型散热器,提供低热阻以实现最大散热效果。 - 高浪涌电流承受能力。 - 通用三向端子:可采用卡扣、绕线或PCB板安装。

引脚分配:文档中没有直接提供引脚分配信息。

参数特性: - 重复峰值反向电压(VRRM):50V至400V - 有效值反向电压(VRMS):35V至280V - 直流阻断电压:50V至400V - 工作温度范围:-55至150摄氏度 - 存储温度范围:-55至150摄氏度

功能详解:整流器能够在不同的负载条件下工作,包括电阻性或电感性负载,对于电容性负载需要降低电流。

应用信息:文档中提供了最大输出整流电流的图表和最大功耗散量的图表,以及瞬态热阻抗和结电容的典型值。

封装信息:GBPC-T/W封装,包括尺寸和端子配置。产品标记有部件编号和端子配置。
GBPC35005T 价格&库存

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