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GBPC5004W

GBPC5004W

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    GBPC-W

  • 描述:

    DIODE BRIDGE 400V 50A GBPC-W

  • 数据手册
  • 价格&库存
GBPC5004W 数据手册
GBPC50005T/W thru GBPC5004T/W Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 50 V - 400 V IO = 50 A Features • Integrally molded heat sink provides low thermal resistance for maximum heat dissipation • High surge current capability • Void-free junction soldering by using vacuum soldering • Universal 3-way terminals: snap on, wire-around, or P.C board mounting • High temperature soldering guaranteed: 260⁰C/ 10 seconds at 5 lbs (2.3 kg) tension • Not ESD Sensitive GBPC-T/W Package Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25". Faston lugs or copper leads 0.040" diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 19 grams or 0.67 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Parameter Symbol Conditions GBPC50005T/W GBPC5001T/W GBPC5002T/W GBPC5004T/W Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Unit 100 200 400 V 35 70 140 280 V 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 400 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop per leg Maximum DC reverse current at rated DC blocking voltage per leg Rating for fusing RMS isolation voltage from case to leads Typical junction capacitance Typical thermal resistance Oct. 2018 Conditions GBPC50005T/W GBPC5001T/W GBPC5002T/W GBPC5004T/W Unit IO Tc = 50 °C 50.0 50.0 50.0 50.0 A IFSM single sine-wave 400 400 400 400 A VF IF = 25 A 1.2 1.2 1.2 1.2 V Ta = 25 °C 5 5 5 5 500 1200 500 1200 500 1200 500 1200 A sec VISO 2500 2500 2500 2500 V Cj 360 360 360 360 pF RΘJC 1.2 1.2 1.2 1.2 °C/W IR 2 It Ta = 125 °C 1 ms < tm < 8.3 ms http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc5004tw.pdf μA 2 1 GBPC50005T/W thru GBPC5004T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc5004tw.pdf 2 GBPC50005T/W thru GBPC5004T/W Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc5004tw.pdf 3 GBPC50005T/W thru GBPC5004T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/gbpc5004tw.pdf 4
GBPC5004W 价格&库存

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