TPH3205WSBQA

TPH3205WSBQA Not recommended for new designs—see TP65H050WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description Features The TPH3205WSBQA 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package Package Configuration TPH3205WSBQA 3 lead TO-247 Source TPH3205WSBQA TO-247 (top view) S  JEDEC and AEC-Q101 qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications      Automotive Datacom Broad industrial PV inverter Servo motor Key Specifications G VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mΩ) max* S D 62 QRR (nC) typ 136 QG (nC) typ 28 * Dynamic on-resistance; see Figures 19 and 20 Common Topology Power Recommendations Cascode Schematic Symbol Cascode Device Structure CCM bridgeless totem-pole* 2983W max Hard-switched inverter** 3581W max Conditions: FSW=45kHz; TJ=115°C; THEATSINK=90°C; insulator between device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower voltages with constant current * VIN=230VAC; VOUT=390VDC ** VIN=380VDC; VOUT=240VAC October 31, 2019 tph3205wsbqa.2 © 2017 Transphorm Inc. Subject to change without notice. 1 TPH3205WSBQA Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±18 Maximum power dissipation @TC=25°C 125 W Continuous drain current @TC=25°C b 35 A Continuous drain current @TC=100°C b 22 A Pulsed drain current (pulse width: 10µs) 150 A (di/dt)RDMC Reverse diode di/dt, repetitive c 1500 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 2900 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Typical Unit 1 °C/W 40 °C/W V(TR)DSS VGSS PD ID IDM TC TJ TS TSOLD Operating temperature Storage temperature Soldering peak temperature e V Notes: a. In off-state, spike duty cycle D