MWT-1789SB

MwT-1789SB 0.5 – 4 GHz Packaged FET Features: • • • • • Designed for single voltage operations Ideal for 0.5 – 4.0 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 44 dBm IP3 o 65 dBc ACPR o 28 dBm P1dB o 18 dB SSG @ 2000MHz o 1.3 dB NF @ 2000MHz MTTF>100 years @ channel temperature 150 °C Lead Free RoHS Compliant Surface-Mount SOT-89 Package Description: Designed specifically for single voltage operations (i.e., no negative voltage is required), the MwT-1789SB is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver or high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TDSCDMA, and UMTS base stations. This product is alsoideal for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product can be used for point-topoint microwave communications links. The third order intercept performance of the MwT-1789SBis excellent, typically 16 dB above the 1 dB power gain compression point. The NF is as low as 1.0 dB at900 MHz. The chip is produced using MwT's proprietary high linearity device design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability. Electrical Specifications(1): SYMBOL @ Vdd=6.5V, Ids~260mA, Ta=25 °C PARAMETERS & CONDITIONS FREQ UNIT TYP SSG Small Signal Gain 2GHz dB 18 P1dB Output Power @ 1 dB Compression 2GHz dBm 28 PAE Power Added Efficiency 2GHz % 40 IP3 Third Order Intercept Point 2GHz dBm 44 NF Noise Figure (2) 2GHz dB 1.3 (1) RF measurements are taken in a test fixture with tuners at input and output. (2) Vdd=4.5 V @ Ids~100mA. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. MwT-1789SB 0.5 – 4 GHz Packaged FET DC Specifications: SYMBOL IDSS IDS Gm Vgs Vp BVGSO (Ta = 25ºC) PARAMETERS & CONDITIONS Saturated Drain Current Vds=3.0 V Vgs=0.0 V Drain-to-Source Current Vdd=4.5V Transconductance Vds=2.0 V Vgs=0.0 V Gate-to-Source Voltage Vdd=6.5 V Pinch-off Voltage Vds=3.0 V Ids=16.0 mA Gate-to-Source Breakdown Voltage Igs= -2.4 mA BVGDO Gate-to-Drain Breakdown Voltage Igd= -2.4 mA Rth Thermal Resistance UNITS MIN TYP mA 440 680 mA 100 350 mS 380 V -0.5 V -2.5 V -6.0 -12.0 V -9.0 -12.0 °C/W 30 SOT-89 Outline Diagram 1: Gate; 2,4: Source; 3: Drain Dimensions in mm/inch MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. MAX -5.0 MwT-1789SB 0.5 – 4 GHz Packaged FET Typical Scattering Parameters: (Vdd=6.5V Ids~2600mA Ta =25°C Reference Planes at Leads) F[GHz] S11 S21 S12 S22 Mag Ang Mag Ang Mag Ang Mag Ang 0.05 0.95 -33.45 24.11 150.65 0.01 58.41 0.36 -65.44 0.25 0.88 -62.59 13.37 142.80 0.03 44.28 0.29 -91.14 0.50 0.88 -109.60 9.70 120.68 0.051 30.07 0.38 -140.00 0.75 0.80 -130.20 7.41 108.29 0.055 29.70 0.35 -160.16 1.00 0.76 -153.03 5.88 99.22 0.060 29.41 0.33 -176.88 1.25 0.74 -165.44 5.03 86.58 0.063 30.02 0.32 171.21 1.50 0.72 179.50 4.18 77.79 0.069 30.60 0.31 159.02 1.75 0.72 170.11 3.70 70.42 0.075 30.82 0.31 148.91 2.00 0.71 156.68 3.24 63.43 0.081 29.90 0.32 135.45 2.25 0.72 147.77 2.93 53.60 0.087 27.99 0.33 125.97 2.50 0.73 135.27 2.63 47.82 0.091 22.03 0.21 114.01 2.75 0.73 127.20 2.30 43.30 0.095 19.52 0.35 106.46 3.00 0.74 116.66 2.00 34.18 0.097 17.90 0.37 97.15 3.25 0.74 120.53 1.96 31.93 0.097 11.70 0.40 91.37 3.50 0.74 120.44 1.86 29.16 0.097 11.93 0.42 86.02 3.75 0.74 115.26 1.66 25.29 0.097 12.12 0.43 83.09 4.00 0.74 113.50 1.58 20.54 0.098 15.27 0.45 78.71 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. Ma MwT-1789SB 0.5 – 4 GHz Packaged FET APPLICATION CIRCUIT INFORMATION The information provided in this section is intended to demonstrate various applications for the MWT-1789SB. Given below are circuit schematics and list of materials for the designs. The typical RF performance is also provided. (I) FEEDBACK CIRCUIT CONFIGURATION CIRCUIT SCHEMATIC MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. MwT-1789SB 0.5 – 4 GHz Packaged FET BILL OF MATERIALS: Reference Designation C11 C10 C9 C1 C5 C2 C3 C4 L1 L3 L4 R1 R2 TR1 TR2 Q 0.80-1.00 100 1000 0.1 33 0.8 100 4.3 4.7 100 2.5 1000 280 0 0 MWT-1789SB Value 1.90-2.10 2.40-2.60 100 100 1000 1000 0.1 0.1 33 33 2.0 1.2 33 33 1.2 0.5 0 1.2 100 10 0 0 1000 1000 330 300 0 25 0 15 MWT-1789SB MWT-1789SB Unit GHz pF pF μF pF pF pF pF nH nH nH Ohm Ohm Deg Deg - 3.50-3.70 100 1000 0.1 22 1.0 22 1.0 5.1 10 0 1000 280 0 30 MWT-1789SB Part Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Inductor Chip Inductor Chip Inductor Chip Resistor Chip Resistor 50 Ohm TRL 50 Ohm TRL MESFET Size 0505 0505 0505 0505 0505 0505 0505 0603 0603 0603 0603 0603 SOT89 TYPICAL RF PERFORMANCE: (A) For High Linearity Applications Vdd = 6.5V, Ids = 260 mA, Ta = 25 °C FREQ (MHz) 800-1000 1900-2100 2400-2600 3500-3700 SSG (dB) 18 16 13 13 R/L, In (dB) -10 -11 -11 -10 R/L, Out (dB) -9 -11 -11 -10 NF (dB) 2.5 2.5 2.7 3.0 P1dB (dBm) 27 27 27 27 IP3 (dBm) 43 43 43 43 800-1000 1900-2100 2400-2600 3500-3700 16.0 14.0 13.0 12.5 R/L, In (dB) -9 -9 -9 -8 R/L, Out (dB) -10 -10 -10 -10 NF (dB) 1.7 1.8 2.3 2.6 P1dB (dBm) 22.5 22.5 22.5 22 38 38 38 37 (B) For Low Noise Applications Vdd = 5.0V, Ids = 100 mA, Ta = 25 °C FREQ (MHz) SSG (dB) IP3 (dBm) MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. MwT-1789SB 0.5 – 4 GHz Packaged FET (II) BALANCED CIRCUIT CONFIGURATION CIRCUIT SCHEMATIC BILL OF MATERIALS: Reference Designation C7 C8 C9 C1, C2, C3, C4 C5, C10 C6, C11 L1, L3 L2, L4 L5, L6, L7, L8 R1, R2 R3, R4 H1, H2 Q1, Q2 Value 0.87-0.96 1.93-1.99 100 100 1000 1000 0.1 0.1 100 22 0.5 1.2 1.6 1.2 6.8 5.1 5.1 1.8 100 82 1000 1000 50 50 MWT-1789SB MWT-1789SB Unit GHz pF pF uF pF pF pF nH nH nH Ohm Ohm - Part Size Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Inductor Chip Inductor Chip Inductor Chip Resistor Chip Resistor Quad. Hybrid MESFET 0603 0603 1206 0603 0603 0603 0603 0603 0603 0603 0603 0.35” x 0.56” SOT89 TYPICAL RF PERFORMANCE: (Vdd=5.0V, Ids~200mA, Ta=25°C) Freq MHZ 870-960 1930-1990 Gain dB 17 15 ΔG dB +/- 0.3 +/- 0.2 NF dB 1.1 1.4 P1dB dBm 25 25 IP3 dBm 41 41 VSWR In 1.2:1 1.2:1 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © 2006 Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package. Out 1.2:1 1.2:1